2020
DOI: 10.1016/j.ceramint.2019.11.177
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Activation energy mediated band structure in strained multiferroic BiFeO3 thin films

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Cited by 5 publications
(3 citation statements)
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“…In previous reports, the R-phase was found to have a higher dielectric constant compared to the Tphase or the mixed phase in both doped BFO films and ceramics. 43,44 Similarly, the dielectric constant of the R-phase of the (001)-oriented PZN-PT single crystal is even more than 6 times larger than that of the T-phase. This is because the polarization direction in the R-phase does not coincide with the spontaneous polarization direction.…”
Section: Resultsmentioning
confidence: 99%
“…In previous reports, the R-phase was found to have a higher dielectric constant compared to the Tphase or the mixed phase in both doped BFO films and ceramics. 43,44 Similarly, the dielectric constant of the R-phase of the (001)-oriented PZN-PT single crystal is even more than 6 times larger than that of the T-phase. This is because the polarization direction in the R-phase does not coincide with the spontaneous polarization direction.…”
Section: Resultsmentioning
confidence: 99%
“…Few studies can be found on the temperature dependence of BiFeO 3 film properties. The permittivity increases with the increase of the temperature in the temperature range from −193 • C to 27 • C [206] and then it remains stable up to 400 • C [207].…”
Section: Bifeomentioning
confidence: 99%
“…The rational utilization of oxygen vacancies, by introducing an impurity band as an intermediate band among the band gap of ferroelectric semiconductors by controlling the content of oxygen vacancies in ferroelectrics, can effectively improve the photovoltaic effect of BiFeO 3 [30]. Furthermore, another method of improving the performance of BFO is to fabricate BFO films, which introduce stress into thin films via a lattice mismatch [31]. The leakage problems associated with the defective BFO crystal structure have been solved when films are grown using special methods, such as PLD [32], chemical solution deposition [33] and aerosol assisted chemical vapor deposition [34].…”
Section: Introductionmentioning
confidence: 99%