Accessing the Spectral Function in a Current-Carrying Device

Curcio, Davide; Jones, Alfred J. H.; Muzzio, Ryan; Volckaert, Klara; Biswas, Deepnarayan; Sanders, Charlotte E.; Dudin, Pavel; Cacho, Céphise; Singh, Simranjeet; Watanabe, Kenji; Taniguchi, Takashi; Miwa, Jill A.; Katoch, Jyoti; Ulstrup, Søren; Hofmann, Philip

doi:10.1103/physrevlett.125.236403

Cited by 17 publications

(11 citation statements)

References 35 publications

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“…To extract the spatially varying linewidth and position of the two Dirac cones and to determine the local twist angle in the device, we extend a method to extract these quantities from the photoemission intensity. [ 41,50 ] Figure a shows a detailed ARPES snapshot of a region of the TBLG sample with two sharp Dirac cones. We restrict the following analysis to the noninteracting part of the cones around the

(E, k)

‐range shown in Figure 3a.…”

Section: Resultsmentioning

confidence: 99%

“…The intensity in the two branches is nearly symmetric along this cut, which is in sharp contrast to the so‐called “dark corridor,” which arises along the

\overset{true¯}{Γ} - \overset{true¯}{normalK}

line, nearly orthogonal to our cut. [ 41,51 ] The spectral function of top (bottom) Dirac cone,

A_{T (B)}

, is described by

A_{T (B)} (E, k) = \frac{{(2 π)}^{−1} W_{T (B)} ℏ v_{T (B)}}{{(E - ℏ v_{T (B)} | k + Δ K_{T (B)} | - E_{T (B)})}^{2} + {(W_{T (B)} ℏ v_{T (B)} / 2)}^{2}}

where

E_{T (B)}

is the top (bottom) Dirac point energy,

Δ K_{T (B)}

is a rigid k shift relative to the top (bottom) Dirac point position

{\overset{K}{true}}_{T (B)}

, shown in Figure 3b, and

W_{T (B)}

is the linewidth of top (bottom) momentum distribution curves (MDCs). The top (bottom) band velocity,

v_{T (B)}

, that defines the slopes of the linear branches can be described by the fixed value

v_{normalT} = 1.10 \times 10^{6}

(

v_{normalB} = 1.21 \times 10^{6}

) m s −1 that we found for the same device st...…”

Section: Resultsmentioning

confidence: 99%

“…The observed local spikes in the electric field strength are associated with a spatially dependent increase in resistivity, as shown for a single‐layer graphene device. [ 41 ]…”

Section: Resultsmentioning

confidence: 99%

“…So far, such conditions have only been used in an ARPES study on a high temperature superconductor to determine the spectral response to the breakdown current that destroys the coherence of the superconducting quasiparticle, [ 39,40 ] and in a nanoARPES study that demonstrates the possibility to map the local mobility and impact of defect scattering around structural imperfections in exfoliated graphene on hBN. [ 41 ] Being able to perform ARPES in the presence of a current density is another major advantage of the nanoscale light spot as the voltage drop across the beam diameter is small, preventing detrimental energy broadening of the measured spectrum. [ 34,41 ]…”

Section: Introductionmentioning

confidence: 99%

“…[ 41 ] Being able to perform ARPES in the presence of a current density is another major advantage of the nanoscale light spot as the voltage drop across the beam diameter is small, preventing detrimental energy broadening of the measured spectrum. [ 34,41 ]…”

Section: Introductionmentioning

confidence: 99%

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In Operando Angle‐Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

et al. 2021

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To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle‐resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8° to 12.7°. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/μm at the rotational domain boundaries in the device. These proof‐of‐principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.

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(E, k)

‐range shown in Figure 3a.…”

Section: Resultsmentioning

confidence: 99%

“…The intensity in the two branches is nearly symmetric along this cut, which is in sharp contrast to the so‐called “dark corridor,” which arises along the

\overset{true¯}{Γ} - \overset{true¯}{normalK}

line, nearly orthogonal to our cut. [ 41,51 ] The spectral function of top (bottom) Dirac cone,

A_{T (B)}

, is described by

A_{T (B)} (E, k) = \frac{{(2 π)}^{−1} W_{T (B)} ℏ v_{T (B)}}{{(E - ℏ v_{T (B)} | k + Δ K_{T (B)} | - E_{T (B)})}^{2} + {(W_{T (B)} ℏ v_{T (B)} / 2)}^{2}}

where

E_{T (B)}

is the top (bottom) Dirac point energy,

Δ K_{T (B)}

is a rigid k shift relative to the top (bottom) Dirac point position

{\overset{K}{true}}_{T (B)}

, shown in Figure 3b, and

W_{T (B)}

is the linewidth of top (bottom) momentum distribution curves (MDCs). The top (bottom) band velocity,

v_{T (B)}

, that defines the slopes of the linear branches can be described by the fixed value

v_{normalT} = 1.10 \times 10^{6}

(

v_{normalB} = 1.21 \times 10^{6}

) m s −1 that we found for the same device st...…”

Section: Resultsmentioning

confidence: 99%

“…The observed local spikes in the electric field strength are associated with a spatially dependent increase in resistivity, as shown for a single‐layer graphene device. [ 41 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

In Operando Angle‐Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

et al. 2021

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The Rise of Xene Hybrids

Kumar,

Singh,

Guan

et al. 2024

Advanced Materials

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Xenes, mono‐elemental atomic sheets, exhibit Dirac/Dirac‐like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti‐oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter‐layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross‐correlations among these factors are essential. Xene‐based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.

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