Absorption, Reflectance, and Luminescence of GaN Single Crystals

Dingle, R.; Sell, D. D.; Stokowski, S. E.; Dean, P.D.G.; Zetterstrom, R. B.

doi:10.1103/physrevb.3.497

Cited by 48 publications

(14 citation statements)

References 11 publications

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“…Table 4 shows that the A transition is strictly forbidden in z polarization, whereas the B transition is weak since allowed from spin± orbit coupling only and the C one is strong since fully allowed. Reflectance measurements fit this result [6]. Next, Shan et al [7] assigned in their photoreflectance spectra some structures to 2s states of A, B, and C exciton families (light propagating along the z axis).…”

Section: Discussionmentioning

confidence: 85%

Optical Selection Rules for Hexagonal GaN

Tronc¹,

Kitaev²,

Wang³

et al. 1999

phys. stat. sol. (b)

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Section: Discussionmentioning

confidence: 85%

Optical Selection Rules for Hexagonal GaN

Tronc¹,

Kitaev²,

Wang³

et al. 1999

phys. stat. sol. (b)

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“…The experimental reflectivity peaks -0. 4 for these three zinc-blende compounds, with their spin-orbit splittings A , are collected in Table 2 The calculated density of states is shown in Pig. 6.…”

Section: Resultsmentioning

confidence: 99%

“…This peak is certainly somewhat exciton enhanced. Other reflectivity studies of the gap give 3.65 eV [4], and ealier absorption nieasurements give 3.4 eV [l], 3.5 eV [3], and 3.5 eV [ 2 ] . The exciton ground state associated with the band gap has been found a t an energy of 3.47 eV at 2 O K [5].…”

Section: Resultsmentioning

confidence: 99%

Band Structure and Reflectivity of GaN

Bloom

Harbeke

Meier

et al. 1974

Physica Status Solidi (b)

165

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The E 1 c reflectivity has been measured up to 10 eV for hexagonal, single-crystal GaN.The band structure and reflectivity have been computed by the empirical pseudopotential method and used to identify the observed spectral peaks.La rBflectivit6 E 1 c d'un monocristal de GaN hexagonal a 6t6 measure6 jusqu'8 10 eV.La structure de bande et la r6flectivitk ont 6t6 calculkes par la mkthode du pseudopotentiel empirique et ont 8th utiliseks pour identifier les cretes du spectre observ6.

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“…and C excitonic states are included to the model [27][28][29]. The same value of a background dielectric constant ε * 0 = 5.2 is assumed for all GaN-based layers [29].…”

Section: Modelmentioning

confidence: 99%

Angle dependence of the photonic enhancement of the magneto-optical Kerr effect in DMS layers

Koba¹,

Suffczyński²

2014

EPL

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We investigate theoretically an angle dependence of enhancement of polar magneto-optical Kerr effect (MOKE) obtained thanks to a deposition of a paramagnetic Diluted Magnetic Semiconductor (DMS) layer on one-dimensional photonic crystal layer. Our transfer matrix method based calculations conducted for TE and TM polarizations of the incident light predict up to an order of magnitude stronger MOKE for a (Ga,Fe)N DMS layer when implementing the proposed design.The maximum enhancement for TE and TM polarization occurs for the light incidence at the normal and at the Brewster angle, respectively. This indicates a possibility of tuning of the MOKE enhancement by adjustment of the polarization and the incidence angle of the light.

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Absorption, Reflectance, and Luminescence of GaN Single Crystals

Cited by 48 publications

References 11 publications

Optical Selection Rules for Hexagonal GaN

Optical Selection Rules for Hexagonal GaN

Band Structure and Reflectivity of GaN

Angle dependence of the photonic enhancement of the magneto-optical Kerr effect in DMS layers

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