Absorption edge of CdS thin films

Bujatti, M.; Marcelja, F.

doi:10.1016/0040-6090(72)90051-x

Cited by 40 publications

(14 citation statements)

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“…The Dow-Redfield model [13,15] seems to be realistic approach towards understanding the absorption behavior at the band tails due to grain boundary trap states in a polycrystalline semiconductor like CdTe. Bujatti and Marcelja [14] modified the Dow-Redfield model by contribution P(D) of the diameter (D) of the spheres. They obtained a useful expression for the normalised total absorption (A) from which the potential barriers at the grain boundaries could be obtained, under some simplified assumptions concerning the shape of the barrier.…”

Section: Grain Boundary Studies From Below Band Gap Absorption Studiesmentioning

confidence: 99%

“…The surface roughness (r 0 ) for the GaN films deposited at different temperatures was obtained form the slopes of the plots (not shown here) of ln(R 0 / R) vs. 1 / k 2 (r 0 ) and found to vary between 68 and 76 nm. Distribution of grain sizes in these polycrystalline films could also be conveniently computed [14] from the diffuse (R diff ) and specular (R o ) reflectance by considering a Gaussian distribution of the crystallite size (D):…”

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

“…Distribution of grain sizes and surface roughness (r 0 ), which is the rms height fluctuations of the surface irregularities, can be evaluated by measuring the diffused part of the reflectance (R diff ) and specular (R o ) reflections from the film surface [14]. We have recorded both the specular (R) and diffused (R diff ) part of the reflectance and r 0 was determined from the variation of R / (R + R diff ) with wavelength (k) by using the relation [14]:…”

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

“…We have recorded both the specular (R) and diffused (R diff ) part of the reflectance and r 0 was determined from the variation of R / (R + R diff ) with wavelength (k) by using the relation [14]:…”

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

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Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties

et al. 2005

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Section: Grain Boundary Studies From Below Band Gap Absorption Studiesmentioning

confidence: 99%

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

Section: Grain Distribution and Surface Roughnessmentioning

confidence: 99%

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Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties

et al. 2005

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“…For high resistive films, the measurement of mobility or conductivity becomes difficult, if not impossible. Optical measurements were adopted by some workers to derive information for grain boundary parameters (Redfield 1963;Dow and Redfield 1970;Bujatti and Marcelja 1972;Maiti et al 1994) in such high resistive films.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

Bhattacharyya

Pal

2008

Bull Mater Sci

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Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300-623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (h-GaN) while films deposited at 623 K were predominantly cubic (c-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott's hopping for films containing c-GaN while Efros and Shklovskii (E-S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing h-GaN. A crossover from Mott's hopping to E-S hopping in the 'soft' Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ~2⋅73 eV to that for peak at ~3⋅11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.

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Studies on CdSxSe1−x films prepared by two-zone hot wall technique

Dutta

Pal

Chattopadhyay

et al. 1993

Phys. Stat. Sol. (a)

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Polycrystalline thin films of CdSxSe1−x (0 < x < 0.8) are prepared by co‐evaporating CdS and CdSe from a two‐zone evaporation source. The films are characterised by measuring optical and electrical properties. Information on the microstructures are obtained from XRD and TEM/SEM measurements. Raman shifts in the films with composition are also reported. Information on the scattering mechanism is derived from the thermoelectric power measurements. Grain boundary scattering effects in these films are also studied critically.

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Absorption edge of CdS thin films

Cited by 40 publications

References 10 publications

Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties

Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties

Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

Studies on CdSxSe1−x films prepared by two-zone hot wall technique

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