Absolute fluorine atom concentrations in RIE and ECR CF<sub>4</sub>plasmas measured by actinometry

Jenq, J.‐S.; Ding, Ji Cheng; Taylor, James W.; Hershkowitz, N.

doi:10.1088/0963-0252/3/2/005

Cited by 79 publications

(46 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…RIE experiments were carried out with a Plasma Therm parallel plate etcher ͑Model 2484͒ operated with 700-1500 W of rf at 13.56 MHz, 37 mTorr, and flow rate ϭ20 sccm. Ion flux J i was measured with Langmuir probes, plasma potential with emissive probes and Langmuir probes, fluorine concentration by Ar actinometry, 15 and CF 2 concentration using diode laser infrared absorption. 16 Figure 1 gives a comparison of the measured SiO 2 etch rate by a CF 4 plasma, in the ECR 10 and RIE tools, with the etch rate given by Eq.…”

Section: ͑9͒mentioning

confidence: 99%

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding

Hershkowitz

1996

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

A symmetric rate model for plasma etching and plasma deposition in fluorocarbon plasmas is proposed. When there is no deposition, the symmetric rate model gives a plasma etch rate. When there is no etching, the model gives a plasma deposition rate. Electron cyclotron resonance and reactive ion etcher etch rates of SiO 2 in CF 4 plasma are found to be consistent with the model. © 1996 American Institute of Physics. ͓S0003-6951͑96͒02212-3͔Plasma etching is an important technology in the fabrication of very large scale integrated circuits.1 With the feature size smaller than 0.5 m, the empirical approach for the optimization of plasma etching is getting more and more difficult, and basic understanding of plasma etching is becoming crucial for process control. In the etching of SiO 2 with fluorocarbon plasmas, both etching and deposition occur simultaneously 2 and both processes need to be understood.Many rate models have been proposed for plasma etching ͑see Refs. 3-8 and references therein͒. Among these models, Zawaideh and Kim 7 proposed a model to include both linear effects of chemical and physical etching, and the nonlinear effect of ''enhanced'' chemical and physical etching. Hoffmann and Heinrich 8 simplified the model proposed by Zawaideh and Kim to describe reactive ion etching ͑RIE͒ of polysilicon with SF 6 plasma. Gottscho, Jurgensen, and Vitkavage 10 proposed an ion-neutral synergy model based on the mass transport model proposed by Mayer and Barker. 3,5 In this letter, a symmetric rate model for plasma etching and deposition is developed.In both plasma etching and deposition, energetic ions, etching species, and deposition species have been shown to be important. [9][10][11][12][13][14] showed that plasma etching and deposition rates of plasma perfluoropolymer thin films have a similar dependence on ion energy. Ding et al. 10 found in an electron cyclotron resonance ͑ECR͒ etcher that the etch rates of SiO 2 with CF 4 /O 2 /Ar plasmas only depend on ion energy flux and F-atom density. They quantified the boundary between the ion energy flux limited regime and the F-atom flux limited regime. Mutsukura et al.11 studied the deposition of hydrogenated hard-carbon films in a CH 4 rf discharge plasma. They found at high pressure that the film deposition rate was predominantly dependent on the ion energy flux. They also found at very low pressure that the film deposition rates were almost the same for different rf power at each pressure condition. Similar trends have also been found by the other groups. 12-14Based on the experimental results and the models mentioned earlier, we assume that the ion enhanced chemical etch rate and the ion enhanced chemical deposition rate are proportional to the ion energy flux multiplied by the surface coverage of the etching or deposition species. This assumption means the etch rate and deposition rate are symmetric. If the products of the reaction are volatile, then the process results in net etching. If the products of the reaction are involatile, then the process results in...

show abstract

Section: ͑9͒mentioning

confidence: 99%

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding

Hershkowitz

1996

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…It was found that the F concentration ranges from 10 21 to 10 22 m À3 , depending on the partial pressure of CF 4 and the input power density. This concentration is roughly two orders of magnitude higher than that found in low-pressure fluorine plasmas [15,16]. The other most abundant reactive species are CF 2 and CF 3 .…”

Section: Discussionmentioning

confidence: 63%

Etching of uranium oxide with a non-thermal, atmospheric pressure plasma

Yang

Moravej

Babayan

et al. 2004

Journal of Nuclear Materials

View full text Add to dashboard Cite

“…Comparison of model predictions to measured composition trends showed the wall-recombination probability for chlorine atoms on a chlorinated anodized-aluminum surface must exceed 0.1. Panon et al [59] have used actinometry [60] to establish the wall recombination probability as a function of the temperature of a Pyrex wall for O atoms flowing in a DC glow discharges for pressures ranging from 0.36-2 torr. Sarfaty et al have shown (see Fig.…”

Section: Modelingmentioning

confidence: 99%