A Wideband Supply Modulator for 20 MHz RF Bandwidth Polar PAs in 65 nm CMOS

Shrestha, R.; Zee, Ronan van der; Graauw, A.J.M. de; Nauta, Bram

doi:10.1109/jssc.2009.2014730

Cited by 80 publications

(54 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 4 shows the architecture of the modulator comprising of a self-oscillating parallel linear and switching amplifier [2], [5], [7], [8], [10]. The linear amplifier (AB) takes care of the linearity while the switching amplifier (D) supplies most of the current ensuring high efficiency.…”

Section: Challenges Of Modulatormentioning

confidence: 99%

“…This suggests that, for high switching frequencies, the effect of envelope slewing can be neglected as far as efficiency is concerned. In other words, (8) and (9) can be used to get a first estimation of and for the optimum efficiency. In case of hard switching of D, we get for 65 nm CMOS using minimal channel length transistors.…”

Section: Efficiency Optimization and Wlan Signal Statisticsmentioning

confidence: 99%

“…In case of hard switching of D, we get for 65 nm CMOS using minimal channel length transistors. For mA and and , 5 m nH, optimum efficiency is obtained when mA and nH from (8) and (9). However, the resulting switching frequency is about 281 MHz.…”

Section: Efficiency Optimization and Wlan Signal Statisticsmentioning

confidence: 99%

“…The major requirements of the supply modulator used in a polar modulation architecture are large bandwidth, low switching ripple and small differential delay between envelope and phase paths. This paper presents a supply modulator, consisting of a 3-stage cascoded nested Miller compensated linear amplifier and a class D switching amplifier, for a 20 MHz signal bandwidth polar modulated PA [8]. The bandwidth is verified by satisfying the linearity requirements for a IEEE 802.11g 64QAM OFDM signal, when the presented modulator is tested in a real polar modulated transmitter.…”

Section: Introductionmentioning

confidence: 96%

“…Section V presents the measurement results obtained for the prototype and finally, conclusions are drawn in Section VI. Compared to [8], this paper presents a detailed theoretical analysis and derives critical parameters for the design with an extensive discussion on design choices.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

Shrestha¹,

Zee²,

Graauw³

et al. 2008

2008 IEEE Symposium on VLSI Circuits

View full text Add to dashboard Cite

Section: Challenges Of Modulatormentioning

confidence: 99%

Section: Efficiency Optimization and Wlan Signal Statisticsmentioning

confidence: 99%

Section: Efficiency Optimization and Wlan Signal Statisticsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

Shrestha¹,

Zee²,

Graauw³

et al. 2008

2008 IEEE Symposium on VLSI Circuits

View full text Add to dashboard Cite

Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

Lie

Lopez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

View full text Add to dashboard Cite

This article presents a detailed design example of applying envelope tracking (ET) techniques on a highly monolithic silicon‐based radio‐frequency (RF) power amplifier (PA) to form a high‐efficiency and low‐cost ET‐PA system. An envelope‐tracked SiGe cascode PA with an integrated complementary metal–oxide–semiconductor (CMOS) envelope modulator for mobile WiMAX and 3GPP long‐term evolution (LTE) transmitters (TXs) is shown in this work. The entire ET‐based RF PA system delivers the linear output power of 22.3/24.3 dBm with the overall power‐added efficiency (PAE) of 33%/42% at 2.4 GHz for the WiMAX 64QAM and the 3GPP LTE 16QAM modulations, respectively. Additionally, it exhibits a highly efficient broadband characteristic for multiband applications. Compared with the conventional fixed‐supply cascode PA, our ET‐based cascode PA meets the WiMAX/LTE spectral mask and error vector magnitude (EVM) spec at close to its P 1dB compression without the need for predistortion. The SiGe PA and the CMOS envelope modulator are both designed and fabricated in the TSMC 0.35‐μm SiGe bipolar CMOS (BiCMOS) process on the same die. This work represents an essential integration step toward achieving a fully monolithic ET‐based TX for wideband wireless applications.

show abstract

Power Amplifier Supply Modulators

Wolff¹,

Bengtsson²

2019

Wiley Encyclopedia of Electrical and Electronics Engineering

View full text Add to dashboard Cite

RF power amplifiers (PAs) are used in mobile communication networks for the amplification of the modulated RF signals. Linear RF PAs suffer from severe efficiency degradation if the output power is reduced and the PA is operated at power back‐off.Dynamic control of the RF PA supply voltage, that is, supply modulation, is an effective method to increase the PA efficiency at reduced output power. The variable supply voltage is generated by the so‐called supply modulator. Designing of such modulators is a challenging task since a large bandwidth in combination with high output power is required. Several topologies for supply modulators have been developed in the past and intensively optimized. This article gives an overview of the available topologies, the challenges with each topology, and the performance of the systems.

show abstract

A Wideband Supply Modulator for 20 MHz RF Bandwidth Polar PAs in 65 nm CMOS

Cited by 80 publications

References 12 publications

A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

Power Amplifier Supply Modulators

Contact Info

Product

Resources

About