A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

Djeffal, F.; Meguellati, M.; Benhaya, A.

doi:10.1016/j.physe.2009.08.002

Cited by 60 publications

(24 citation statements)

References 14 publications

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“…The first step of our approach consists of compact models of subthreshold parameters for short channel GCGSDG MOSFETs proposed by our team [1]. Using the SILVACO software [10] for validation of the developed analytical models, it was observed that the formulated analytical subthreshold parameters models can be used as objective functions, which are given as function of input design variables.…”

Section: Computation Methodologymentioning

confidence: 99%

“…Assuming that the drain current, I ds , is proportional to the total amount of the free carrier at the virtual cathode and their density n min (y) follows the Boltzmann distribution function [1,3,5], an analytical model of subthreshold swing can be given as,…”

Section: Computation Methodologymentioning

confidence: 99%

“…1 include: ideal subthreshold slope; light doping of the channel reducing the mobility degradation due to the elimination of impurity scattering; good control of short channel effects; ideal subthreshold swing due to the elimination of substrate doping; etc. [1][2][3][4]. The step-function graded channel doping distribution region is presented in region I with a length of L 1 where N AH and N AL represent the high and low doping concentrations for both regions, respectively, L is the channel length of the DG MOSFET.…”

mentioning

confidence: 99%

“…So, the threshold voltage reduction with decreasing channel lengths, the subthreshold swing, the OFF-current and the drain induced barrier lowering (DIBL) are important parameters that need to be addressed while providing immunity against Short-Channel-Effects (SCEs) [1,5]. To improve the device immunity against SCEs, a new design approaches are required to enhance the reliability performances of the devices for digital applications.…”

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confidence: 99%

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Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

2011

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In this paper, a multi-objective genetic algorithms-based approach is proposed to study and optimize the subthreshold behavior of Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET for nanoscale CMOS digital applications. The subthreshold parameters such as threshold voltage, drain induced barrier lowering (DIBL), subthreshold swing and OFF-current have been ascertained and mathematical models have been proposed. The proposed mathematical models are used to formulate the objectives functions, which are the pre-requisite of genetic algorithm. The overall objective function is formulated by means of weighted sum approach. Thus, the proposed approach is used to search for optimal subthreshold parameters to obtain better electrical performances of the devices for digital application.

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Section: Computation Methodologymentioning

confidence: 99%

Section: Computation Methodologymentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

2011

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“…1 Introduction Double-Gate (DG) MOSFETs with undoped body have become very attractive for scaling CMOS devices down to nanometer sizes because of a number of advantages such as ideal sub-threshold slope, excellent short-channel-effects immunity, and unique mobility enhancement [1][2][3]. However, in deep submicron scale, the hot-carrier induced damage becomes a major reliability concern.…”

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confidence: 99%

An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects

Djeffal¹,

Bentrcia²,

Bendib³

2010

Phys. Status Solidi (c)

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In the present work, a comprehensive drain current model including the interfacial hot‐carrier degradation effects for undoped symmetric gate stack double gate (GSDG) MOSFET and the expressions of transconductance and drain conductance have been obtained. Exploiting this new device model, we have found that the incorporation of a high‐k layer between oxide region and gate metal leads to drain current enhancement, improved output conductance, increased transconductance parameter and enhanced interfacial hot‐carrier immunity. The proposed model has been validated by comparing the analytical I‐V characteristics with 2‐D numerical results. The obtained results may provide a theoretical basis and physical insights for multigate MOSFET‐based circuits design including the hot‐carrier degradation effects. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

Cited by 60 publications

References 14 publications

Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms

An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

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