A thin-film solar cell of high-quality <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si3.gif" overflow="scroll"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">β</mml:mi></mml:mrow></mml:mrow></mml:math>-FeSi2/Si heterojunction prepared by sputtering

Liu, Zhengxin; Wang, Shinan; Otogawa, Naotaka; Suzuki, Yasuhito; Osamura, Masato; Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Nakayama, Yasuhiko; Tanoue, H.; Makita, Yunosuke

doi:10.1016/j.solmat.2005.03.014

Cited by 94 publications

(76 citation statements)

References 12 publications

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“…Up to now, the highest efficiency of β-FeSi 2 thin film solar cell is only 3.7% [1], far from the theoretical efficiency of 16-23% [2]. The poor performance of β-FeSi 2 solar cell might be due to low quality of β-FeSi 2 film and un-sharp interface between β-FeSi 2 film and Si substrate, which is mainly induced by Fe-Si inter-diffusion during the β-FeSi 2 formation [3,4].…”

Section: Introductionmentioning

confidence: 98%

“…Because of its high absorption coefficient (>10 5 cm -1 ), direct band-gap (~0.85 eV), non-toxicity and abundant Si and Fe resources, β-FeSi 2 has motivated intensive research as a novel thin film photovoltaic material [1,2,5,6]. Up to now, the highest efficiency of β-FeSi 2 thin film solar cell is only 3.7% [1], far from the theoretical efficiency of 16-23% [2].…”

Section: Introductionmentioning

confidence: 99%

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Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell

Hou

Cao

Liu

et al. 2010

Phys. Status Solidi (c)

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Single‐phase β‐FeSi2 films have been prepared by Fe‐Si mixed targets in a facing target sputtering (FTS) system. Compared with depositing iron on silicon, co‐sputtering of Fe and Si atoms in as‐deposited samples guarantees that Fe and Si atoms only need relative low energy via short distance migration to form iron silicide during the annealing process, which helps decreasing annealing temperature and reducing annealing time. Then pure single‐phase β‐FeSi2 films can be obtained at a low annealing temperature 600 °C in this instance. By adjusting the sputtering areas of Fe and Si targets, it’s convenient to control the Fe/Si atom ratios in as‐deposited samples and thus p‐type and n‐type films can be obtained easily. The best n‐type β‐FeSi2 film on Si(111) substrate shows an electron concentration of 1.7×1016 cm‐3 and a Hall mobility of 488cm2/Vs, respectively. An n‐β‐FeSi2/p‐Si(111) heterojunction solar cell has been fabricated with a conversion efficiency 0.54% (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell

Hou

Cao

Liu

et al. 2010

Phys. Status Solidi (c)

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“…For photovoltaic application, the n-type ␤-FeSi 2 /p-type Si (n-␤-FeSi 2 /p-Si) heterojunction has been utilized as solar cell structure [7][8][9][10][11]. The n-␤-FeSi 2 /p-Si heterojunction can be fabricated by the deposition of n-type ␤-FeSi 2 thin film on p-type single-crystalline silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

“…The n-␤-FeSi 2 /p-Si heterojunction can be fabricated by the deposition of n-type ␤-FeSi 2 thin film on p-type single-crystalline silicon substrate. Its conversion efficiency has been reached 3.7% by template buffer layer method [7]. In addition to the conditions of material and device, the incident direction of illumination also affects the photovoltaic properties of n-␤-FeSi 2 /p-Si heterojunction solar cell.…”

Section: Introductionmentioning

confidence: 99%

Study on the n-β-FeSi2/p-Si solar cells under different illuminated directions

Yang

2014

Optik

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“…Efforts have been made to fabricate iron silicide based photovoltaic devices, because β-FeSi 2 has 23% theoretical efficiency in solar cells, and both its layer and nanoparticle forms have potential applications in photovoltaic technology [11][12][13][14][15][16][17]. Terasawa and coworkers proposed a composite β-FeSi 2 /Si film for photovoltaic use, where iron silicide nanoparticles are embedded in silicon.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Molnár

2013

J. Mater. Res.

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A special type of epitaxial growth appears during solid phase thin film reactions, where the reaction product grows epitaxially on the substrate. Some metal silicide layers and nanostructures are known to develop such epitaxial structures. In this study iron silicide was used to study the effect of the growth mode on the epitaxial growth. Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrates by electron gun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The growth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical microscopy. The iron silicide nanostructures were oriented in square directions epitaxially fitting to the surface of Si(001). The shape and size of the nanostructures depended on the annealing temperature. In some cases the nanoparticles were arranged in circles. This might be the direct consequence of a nucleation controlled type transition of iron monosilicide to iron disilicide phase at nanoscale.

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A thin-film solar cell of high-quality β-FeSi2/Si heterojunction prepared by sputtering

Cited by 94 publications

References 12 publications

Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell

Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell

Study on the n-β-FeSi2/p-Si solar cells under different illuminated directions

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

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A thin-film solar cell of high-quality β-FeSi2/Si heterojunction prepared by sputtering

Cited by 94 publications

References 12 publications

Low‐temperature deposition of high quality β‐FeSi2 films by co‐sputtering of Fe and Si for β‐FeSi2/Si heterojunction solar cell

Low‐temperature deposition of high quality β‐FeSi2 films by co‐sputtering of Fe and Si for β‐FeSi2/Si heterojunction solar cell

Study on the n-β-FeSi2/p-Si solar cells under different illuminated directions

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

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Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell

Low‐temperature deposition of high quality β‐FeSi₂ films by co‐sputtering of Fe and Si for β‐FeSi₂/Si heterojunction solar cell