M. Abouzaid, P. Tailpied, P. Ruterana, C. Liu, B. Xiao, S.-J. Cho, Y.-T. Moon, H. Morkoç
The structure of MBE-grown ZnO layers was investigated along with RF sputtered layers at around 600 • C followed by a higher temperature anneal. The ZnO layers were either deposited directly on sapphire or on top of a GaN template. After the MBE growth on (0001)GaN, the analysed layers contain a large density of defects and the interface is not completely coherent on some 2-3 monolayers. In the case of RF sputtering, the samples comprised an Mn-doped part towards the surface on top of about a 150 nm pure ZnO …
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