1983
DOI: 10.1109/isscc.1983.1156513
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Abstract: A 256K X 1 DYNAMIC RAM using single or double polusilicon technology, low resistance poly interconnects and a 2p process w i i e d e s c r i b L F a u l t tolerant techniques, a nibble mode and a CAS before RAS refresh option will also be discussed.Single polysilicon has a processing advantage of simplicity for obtaining higher yields. The cell of Figure 1 shows the titanium silicide word line used for fast row access time. Potential punch-through problems of the transfer device have been reduced through proc…

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