“…This effect has been studied and applied to develop hydrogen sensors based on Pd (or Pt)/SiO 2 MOS structures [47], as well as those based on Pd (or Pt)/TiO 2 (or SnO 2 ) Schottky diodes [48][49][50][51][52][53][54]. Although fabrication of Pd (or Pt)/TiO 2 Schottky devices and their sensing properties to reactive gases were thoroughly investigated during the last two decades [49][50][51]53,54], gas-sensing studies on Pt/SnO 2 diodes were much less frequently reported than the former. The research of gas-sensitive Pt/SnO 2 devices is focused on varistors [55,56], in which the sensing mechanism is not the reduction of the barrier height at the Pt/SnO 2 interface but the lowering of barriers between SnO 2 grains.…”