A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers

A review on ductile mode cutting of brittle materials

“…Grooving and machining tests were conducted to identify the experimental d c value for DMC of tungsten carbide, soda-lime glass and single crystal silicon wafer. It was 2.485 µm for tungsten carbide obtained by grooving using a cubic boron nitride tool with the cutting edge radius of 5.8 µm and speed of 144 m/min [92], 560 nm for sodalime glass obtained by grooving using a single crystalline diamond tool at cutting diameter of 38 mm with the speed of 1000 r/min [43], and 40 nm for single crystal silicon wafer obtained by turning using a single crystalline diamond tool with the cutting speed of 1000 r/min and feed rate of 5 µm/revolution [45], respectively. However, the critical UCT d c value obtained from both theoretical prediction and experimental results for DMC of brittle materials is very small, at micron, sub-micron or even nanometer level, which largely constrains their actual industry application.…”

“…The effect of tool sharpness (or called cutting edge radius) on ductile mode cutting has been studies in some extend [40,45,57]. The undeformed chip thickness for DMC of silicon has not to be larger than its cutting tool edge radius [57].…”

“…The undeformed chip thickness for DMC of silicon has not to be larger than its cutting tool edge radius [57]. The critical UCT for DMC of silicon was also investigated using different diamond tool edge radii [40,45]. It was found increasing cutting tool edge radius Fig.…”

“…Actually, the apparent departure of DMC from brittle mode machining is its characteristics of chip morphology. In this connection, a considerable number of publications dealt with the studies of chip formation mechanism and chip structure in the course of DMC [14,45]. Figure 7 [14] showed the SEM photographs of chip formed in machining of tungsten carbide, where layertype chips was obtained when machining with a maximum UCT d max of 920 nm (Fig.…”

“…7(b)). Figure 8 [45] showed the SEM photographs of chip formed in machining of single crystal silicon, where layer-type chips was obtained when machining with a maximum UCT of 20 nm (Fig. 8(a)), and particle-type chips obtained when machining under a maximum UCT of 690 nm (Fig.…”