MRS Proc. 2000 DOI: 10.1557/proc-610-b5.4 View full text
Aaron D. Lilak, Viswanath Krishnamoorthy, David Vieira, Mark Law, Kevin Jones

Abstract: AbstractThe ion implantation of boron remains the most practical means of forming shallow and ultra-shallow p+/n junctions in silicon. A high conductive junction requires both a large density of dopant atoms and electrical activation amongst these. While it is possible to simply higher doses of boron at lower energies, the potential benefits of the changes are often muted by the electrical deactivation of the boron was occurs through a clustering process. Therefore, it is important to do understanding of the k…

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