DOI: 10.1109/itec-ap.2014.6941017
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Abstract: SiC MOSFET has been proven to have tremendous advantages compared to Si counterpart due to its high switching speed and low conduction loss characteristics. However, it also imposes great challenges on users for high speed operation due to much smaller gate capacitance and smaller gate voltage tolerance range. This paper addresses one of the challenges, which is cross talk between switches in the same phase leg when high speed operation is intended.I.