A simple approach to oxide varistor materials

Glot, A.B.

doi:10.1007/s10853-006-0076-x

Cited by 12 publications

(16 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is necessary to mention that according to the developed approach [12,16,17], the obtained dependence φ(E) (Fig. 4, curve 2) reflects a shape of the dependence on the electric field (Fig.…”

Section: To 5)mentioning

confidence: 89%

“…Electrical conduction in SnO 2 ceramics is controlled by the grain-boundary potential barriers [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The activation energy of electrical conduction E σ is a measure of the barrier height φ (φ ≅ E σ ), because using the literature data for single crystals [19] it can be assumed that the Fermi level in the doped SnO 2 grain bulk is situated quite close to the conduction band edge.…”

Section: To 5)mentioning

confidence: 99%

“…The nonlinearity coefficient is defined by the expression β = (E However, the empiric j (E) expression and empiric parameter β 1 cannot enable in understanding the mechanism of non-ohmic conduction. Therefore, starting from the assumption that non-ohmic conduction in ZnO and SnO 2 varistor ceramics is attributed to the decrease of the barrier height with electric field, the expression for the current-voltage characteristic was obtained [12,16,17]:…”

Section: Introductionmentioning

confidence: 99%

“…In the case of thermionic emission across the barrier, the parameter α is proportional to the rate of change in the barrier height φ with the electric field E [12,16,17]:…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Gaponov¹,

Glot²

2011

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. The current-voltage characteristics and temperature dependences of electrical conductivity in SnO 2 -Co 3 O 4 -Nb 2 O 5 -Cr 2 O 3 -CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and the electric field is decreased down to (at ). It makes CuO addition useful for the preparation of SnO (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuObased intergranular phase.

show abstract

Section: To 5)mentioning

confidence: 89%

Section: To 5)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In the case of thermionic emission across the barrier, the parameter α is proportional to the rate of change in the barrier height φ with the electric field E [12,16,17]:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Gaponov¹,

Glot²

2011

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

“…In both groups of materials the grain-boundary barriers play the main role in the conduction process. The varistor effect in ZnO-based and SnO 2 -based materials is related to the lowering of the barrier height with increase in electric field [30][31][32][33][34]. But perhaps the feature of barriers to be decreased (in varistor ceramics) or increased (in ceramics with current limiting behaviour) with the application of voltage depends on the specific impurities at the grain boundaries.…”

Section: Additional Heatmentioning

confidence: 99%

Current limiting and negative differential resistance in indium oxide based ceramics

Glot

Mazurik

Jones

et al. 2010

Journal of the European Ceramic Society

View full text Add to dashboard Cite

Abstract.Indium oxide based ceramics with bismuth oxide addition were sintered in air in the temperature range 800-1300 ºC. Current-voltage characteristics of In 2 O 3 -Bi 2 O 3 ceramics sintered at different temperatures are weakly nonlinear. After an additional heat treatment in air at about 200 ºC samples sintered at a temperature within the narrow range of about 1050-1100 ºC exhibit a current-limiting effect accompanied by low-frequency current oscillations. It is shown that the observed electrical properties are controlled by the grain-boundary barriers and the heat treatment in air at 200 ºC leads to the decrease in the barrier height. Electrical measurements, scanning electron microscopy and X-ray photoelectron spectroscopy results suggest that the current-limiting effect observed in In 2 O 3 -Bi 2 O 3 may be explained in terms of a modified barrier model; the observed current-limiting effect is the result of an increase of barrier height with increasing electric field, due to additional oxygen absorption. It is found that In 2 O 3 -Bi 2 O 3 -Co 3 O 4 -Cr 2 O 3 ceramic exhibits current-voltage characteristics with negative differential resistance due to Joule micro heating.

show abstract

Electrical properties of SnO2 based varistor ceramics with CuO addition

Gaponov

Glot

2009

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

A simple approach to oxide varistor materials

Cited by 12 publications

References 10 publications

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Current limiting and negative differential resistance in indium oxide based ceramics

Electrical properties of SnO2 based varistor ceramics with CuO addition

Contact Info

Product

Resources

About