2020
DOI: 10.1016/j.radphyschem.2019.108459
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A simple approach for developing model OF Si(Li) detector in Monte Carlo simulation

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Cited by 8 publications
(6 citation statements)
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“…On the other hand, since the surveyed detector was manufactured in 2007, changing the dead layers' thicknesses due to aging was assumed as the cause of this deviation. This assumption is in accordance with [10][11][12][13][14]. Therefore, all other parameters were kept as fixed and the thicknesses of the front and rear dead layers were adjusted to reproduce the experimental efficiencies.…”
Section: Monte Carlo Simulationmentioning
confidence: 91%
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“…On the other hand, since the surveyed detector was manufactured in 2007, changing the dead layers' thicknesses due to aging was assumed as the cause of this deviation. This assumption is in accordance with [10][11][12][13][14]. Therefore, all other parameters were kept as fixed and the thicknesses of the front and rear dead layers were adjusted to reproduce the experimental efficiencies.…”
Section: Monte Carlo Simulationmentioning
confidence: 91%
“…Four energy peaks have been considered based on the data from table 2 (5.97, 14.41, 26.34, and 59.54 keV). The simulated efficiency for the photon energy of E is determined as follows [14]…”
Section: Monte Carlo Simulationmentioning
confidence: 99%
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“…Từ đó, thông qua tiết diện tán xạ Rayleigh và tiết diện tán xạ Compton, thu được tỉ số R/C tương ứng với các biến về năng lượng E, góc tán xạ θ và bậc số nguyên tử Z theo công thức (3). Các nguồn đồng vị phóng xạ chuẩn phát gamma và tia X gồm 133 Ba, 137 Cs, 152 Eu, 154 Eu, 241 Am được sử dụng để xây dựng đường cong hiệu suất trong khoảng 12 -60 keV 13 . Các nguồn này có dạng đĩa với đường kính ngoài 25,4 mm và bề dày 6,35 mm.…”
Section: Tử (Không Gây Ion Hóa Hay Kích Thích Nguyên Tử) Tiết Diện Tá...unclassified