A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

Abstract

We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Silicon light emissions from boron implant-induced defect engineering

“…For the three currents, we see that the intensity increases with applied current linearly and the emission of LEDs annealed at 800°C is always higher than that of LEDs annealed at 900°C. All the EL spectra are very similar to those from dislocation loop defect engineering [7], and those from oxidized electrochemically etched silicon [3]. That is, our spectra result from silicon emissions.…”

“…Efficient silicon light emission diodes (Si LEDs) are highly desirable for easy integration of optics with electronics in Si nanoelectronic integrated circuits [1][2][3]. Considerable efforts have been made [3][4][5][6][7][8] in developing Si LEDs compatible with current CMOS nanoelectronic integrated circuit technology.…”

“…Considerable efforts have been made [3][4][5][6][7][8] in developing Si LEDs compatible with current CMOS nanoelectronic integrated circuit technology. The electrical to optical conversion efficiency of standard p-n junction Si LEDs, however, has been very poor due to the fact that silicon is an indirect band gap material and hence its optical processes must involve at least one phonon.…”

Light emission from silicon: Some perspectives and applications

“…Electroluminescence efficiency is 0.001%. 12 Light emission at 1.1 eV is attributed to the excitation of electrons and holes in the sub-oxide matrix and diffusive transport to the Si crystals, where they recombine to the photon. 12 Integration of a 0.1% efficiency, porous-silicon LED process with silicon electronic-driving circuits fabricated on a silicon wafer has also been demonstrated.…”

“…12 Light emission at 1.1 eV is attributed to the excitation of electrons and holes in the sub-oxide matrix and diffusive transport to the Si crystals, where they recombine to the photon. 12 Integration of a 0.1% efficiency, porous-silicon LED process with silicon electronic-driving circuits fabricated on a silicon wafer has also been demonstrated. 13 Silicon crystals as small as 1 nm, embedded in an oxide matrix and denoted as nanocrystalline silicon, have been formed from silicon-rich oxide prepared by Si ion implantation, followed by anneal- ing at temperatures in the range of 900-1,100°C.…”