A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Washio, Katsuyoshi; Ohue, E.; Tanabe, M.; Shimamoto, H.; Onai, T.

doi:10.1109/iedm.1997.650501

Cited by 30 publications

(8 citation statements)

References 5 publications

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“…The 0.6-m-wide SiGe-base and Si-cap multilayer, self-aligned to the 0.2-m-wide emitter, was selectively epitaxially grown by using a UHV/CVD system. The collector capacitance and base resistance were effectively reduced by using a poly-Si assisted selfaligned SEG (PASS) structure [2]. To reduce the parasitic resistances of all the electrodes, Ti-salicide layers were formed.…”

Section: Self-aligned Seg Sige Hbtmentioning

confidence: 99%

92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

Washio

Ohue

Oda

et al. 2001

31st European Solid-State Device Research Conference

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A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.

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Section: Self-aligned Seg Sige Hbtmentioning

confidence: 99%

92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

Washio

Ohue

Oda

et al. 2001

31st European Solid-State Device Research Conference

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“…In particular, the SiGe base HBT can improve its speed dramatically over the Si bipolar transistor (BJT). Further, the gate delay for ECL circuits is less than 10 ps, comparable to that of compound semiconductors [6,7], and cutoff frequencies exceeding 100 GHz [8] have been reported. Further, by the use of the heterojunction, the freedom in the design of the transistor has been increased so that many requirements can be dealt with.…”

Section: Introductionmentioning

confidence: 99%

High‐speed self‐aligned SiGe HBT and application to optical‐fiber‐link ICs

Shimamoto¹,

Ohue²,

Oda³

et al. 2002

Electron Comm Jpn Pt II

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SUMMARYSiGe base heterojunction bipolar transistor (HBT) has high-frequency and high-speed performance comparable to compound semiconductor devices, and also has high cost because the existing Si process is used. Hence, this HBT is expected to be a key device for high-speed optical transmission systems and microwave/millimeter-wave wireless systems. The self-aligned SiGe HBT developed here has a PASS structure with selective epitaxial growth by UHV/CVD and buffered polycrystalline Si in the lower layer of the external base polycrystalline Si. In this way, high-speed operation of the intrinsic transistor and reduction of the parasitic capacitance and resistance are realized at the same time. The cutoff frequency and maximum oscillation frequency of this SiGe HBT are 122 and 163 GHz, and the gate delay time of the ECL circuit is an extremely fast 5.5 ps. Further, an IC to form a 40 Gbit/s optical receiver is fabricated. A preamplifier with a 45-GHz bandwidth, a limit amplifier with a gain of 32 dB, a frequency divider of 60-GHz operations, and a 1:4 DEMUX with a decision circuit operating at 40 Gbit/s are realized. It is shown that the 40 Gbit/s optical receiver IC chip set with the present SiGe HBTs reached a practical level.

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“…This approach has the advantage of being compatible with conventional double polysilicon bipolar technology, which minimizes parasitic collector/base capacitance and gives very fast digital circuit performance. ECL gate delays of 11 ps [5] and 9.3 ps [6] have been reported for this approach.…”

mentioning

confidence: 99%

“…delays around 10 ps [5], [6] and high frequency analog circuits for wireless communication systems [7]. However, in spite of this impressive progress, no single process architecture has yet emerged as the dominant approach for manufacturing SiGe HBT integrated circuits.…”

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Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy

Schiz

Lamb

Cristiano

et al. 2001

IEEE Trans. Electron Devices

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Abstract-SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p + SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated with the epitaxy in two different types of transistor. In the first type, the polysilicon emitter is smaller than the collector active area, so that the extrinsic base implant penetrates into the single-crystal Si and SiGe around the perimeter of the emitter and the polycrystalline Si and SiGe extrinsic base. In these transistors, the Gummel plots are near-ideal and there is no evidence of emitter/collector leakage. In the second type, the collector active area is smaller than the polysilicon emitter, so the extrinsic base implant only penetrates into the polysilicon extrinsic base. In these transistors, the leakage currents observed depend on the base doping level. In transistors with a low doped base, emitter/collector and emitter/base leakage is observed, whereas in transistors with a high doped base only emitter/base leakage is observed. The emitter/collector leakage is explained by punch through of the base caused by thinning of the SiGe base at the emitter perimeter. The emitter/base leakage is shown to be due to a Poole-Frenkel mechanism and is explained by penetration of the emitter/base depletion region into the p+ polysilicon extrinsic base at the emitter periphery. Variable collector/base reverse leakage currents are observed and a variety of mechanisms are observed, including Shockley-Read-Hall recombination, trap assisted tunneling, Poole-Frenkel and band to band tunneling. These results are explained by the presence of polysilicon grains on the sidewalls of the field oxide at the collector perimeter.

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A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

Cited by 30 publications

References 5 publications

92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

High‐speed self‐aligned SiGe HBT and application to optical‐fiber‐link ICs

Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy

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