A RF-MEMS based dual-band tunable filter with independently controllable passbands

Jia, Tianyu; Ye, Jing; Liu, Zewen

doi:10.1109/icsict.2014.7021364

Cited by 6 publications

(5 citation statements)

References 11 publications

(6 reference statements)

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“…Ref. [12] and [26] certainly respectively realize the CF and TZC controllability with the trade-off between extra spaces caused by bias circuit for switch and enlarged inductor size. Therefore, our proposed BPF is promising especially at both the good controllability and the compact chip size.…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, the intrinsic bulk configuration of SIW makes it difficult to be compatible with the other components in an integrated circuit system. To overcome the potential limitations caused by the device size, micro-nano fabrication process such as the low temperature co-fired ceramic (LTCC) process [11], micro-electromechanical system (MEMS) process [12], complementary metal-oxide semiconductor (CMOS) process [13], and integrated passive device (IPD) process [14] are proposed to minimize the device size while keeping the controllability of BPF. As reported in [11], separate electric and magnetic coupling paths are used to develop a BPF with controllable TZs locating at either the lower band or the higher band.…”

Section: Introductionmentioning

confidence: 99%

“…The MEMS and IPD are the potential technologies that allow direct on-die integration with standard CMOS technology and offer the highest density of passive component integration while achieving low loss at a reduced cost [16]. Two independently controllable passbands of BPF can be realized through cantilever-based RF MEMS switched capacitor as mentioned in [12]. These electrostatic tunable capacitors are fabricated through CMOS process [13] to achieve the controllability of the center frequency, and binary tuned network mainly comprised of several single-polesingle-throw PIN-diode switches are developed to achieve the adjustability of the IPD-based BPF [14].…”

Section: Introductionmentioning

confidence: 99%

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GaAs-Based IPD-Fabricated Center-Frequency-Controllable Bandpass Filter With Asymmetrical Differential Inductor and Air-Bridge Enhanced Capacitor

Qiang

Wang

et al. 2019

IEEE Access

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In this paper, a design of bandpass filter (BPF) comprised of an asymmetrical differential inductor and an air-bridge enhanced capacitor is developed using the GaAs-based integrated passive device (IPD) fabrication techniques. The Q-factor can be improved by the asymmetrical differential inductor and differential structure, providing relative less loss for the BPF design. In addition, the capacitor is specially built with different turns inside the blank area of the proposed inductor, and several air bridges are applied to enhance its capacitance with its value varying from 0.295 to 0.318 pF without extending any extra space. Hence, this makes it more feasible to control the center frequency of the proposed BPF. Moreover, the area as compact as 800 µm × 988 µm (0.015λ 0 × 0.018λ 0 ) has been successfully achieved, including the contact pads by the BPF chip fabrication. After the BPF chip is assembled on a sub-board printed circuit board (PCB) and attached on a die sink of the iron cube, the measurement has been effectively conducted. The measurement results of the proposed BPF give the insertion loss of 0.38 dB and the return loss of 17.35 dB at the center frequency of 1.56 GHz. Furthermore, the 3-dB fractional bandwidth (FBW) is calculated as 51.3% and the isolation is higher than 10 dB from 2.62 to 5.45 GHz. By changing the structure in terms of different numbers of turns of the capacitor and with or without the air bridge, variation can be achieved from 1.64 to 2.28 GHz for the center frequency and from 4.31 to 5.81 GHz for the frequency of transmission zero (TZ). Such results validate that our proposed BPF design is capable of offering both sound performance and controllable properties.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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GaAs-Based IPD-Fabricated Center-Frequency-Controllable Bandpass Filter With Asymmetrical Differential Inductor and Air-Bridge Enhanced Capacitor

Qiang

Wang

et al. 2019

IEEE Access

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“…There have been various schemes reported aiming to develop such a BPF with excellent tunability. Tuning of the center frequency and bandwidth has been widely researched in recent studies [5][6][7]. In [5,6], substrate-integrated waveguide (SIW) cavities with E-shaped slots and a cantilever-based RF micro-electromechanical system (MEMS) switched capacitor were applied, through which center frequency tuning was successfully realized.…”

Section: Introductionmentioning

confidence: 99%

“…Tuning of the center frequency and bandwidth has been widely researched in recent studies [5][6][7]. In [5,6], substrate-integrated waveguide (SIW) cavities with E-shaped slots and a cantilever-based RF micro-electromechanical system (MEMS) switched capacitor were applied, through which center frequency tuning was successfully realized. In [7], a compact quad-band utilizing multi-stub-loaded resonators (SLRs) was proposed.…”

Section: Introductionmentioning

confidence: 99%

A Microfabricated Bandpass Filter with Coarse-Tuning and Fine-Tuning Ability Based on IPD Process and PCB Artwork

Shen¹,

Qiang²,

Gao³

et al. 2022

Micromachines

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In this paper, a bandpass filter (BPF) was developed utilizing GaAs-based integrated passive device technology which comprises an asymmetrical spiral inductor and an interleaved array capacitor, possessing two tuning modes: coarse-tuning and fine-tuning. By altering the number of layers and radius of the GaAs substrate metal spheres, capacitance variation from 0.071 to 0.106 pF for coarse-tuning, and of 0.0015 pF for fine-tuning, can be achieved. Five air bridges were employed in the asymmetrical spiral inductor to save space, contributing to a compact chip area of 0.015λ0 × 0.018λ0. The BPF chip was installed on the printed circuit board artwork with Au bonding wire and attached to a die sink. Measured results demonstrate an insertion loss of 0.38 dB and a return loss of 21.5 dB at the center frequency of 2.147 GHz. Furthermore, under coarse-tuning mode, variation in the center frequency from 1.956 to 2.147 GHz and transmission zero frequency from 4.721 to 5.225 GHz can be achieved. Under fine-tuning mode, the minimum tuning value and the average tuning value of the proposed BPF can be accurate to 1.0 MHz and 4.7 MHz for the center frequency and 1.0 MHz and 12.8 MHz for the transmission zero frequency, respectively.

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dA compact dual-band tunable filter adopting cross coupling structure

Zhang

Fang

et al. 2016

2016 11th International Symposium on Antennas, Propagation and EM Theory (ISAPE)

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A RF-MEMS based dual-band tunable filter with independently controllable passbands

Cited by 6 publications

References 11 publications

GaAs-Based IPD-Fabricated Center-Frequency-Controllable Bandpass Filter With Asymmetrical Differential Inductor and Air-Bridge Enhanced Capacitor

GaAs-Based IPD-Fabricated Center-Frequency-Controllable Bandpass Filter With Asymmetrical Differential Inductor and Air-Bridge Enhanced Capacitor

A Microfabricated Bandpass Filter with Coarse-Tuning and Fine-Tuning Ability Based on IPD Process and PCB Artwork

dA compact dual-band tunable filter adopting cross coupling structure

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