A Raman spectroscopy investigation into the influence of thermal treatments on the residual stress of polycrystalline diamond

McNamara, Declan; Alveen, Patricia; Damm, Signe; Carolan, Declan; Rice, James H.; Murphy, Neal; Ivanković, Alojz

doi:10.1016/j.ijrmhm.2015.04.025

Cited by 36 publications

(19 citation statements)

References 40 publications

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“…The maximum shift Δ ω was 0.96 cm −1 , which corresponds to a lattice strain of the order of several hundred megapascals. This value is comparable to the compressive/tensile stress generated by defects in SCD and is considerably smaller than that of polycrystalline diamond films (1–2 GPa) . The full width at half‐maximum (FWHM) mapping showed the broadening of the diamond Raman peak in the CB region with a width of ≈200 μm.…”

Section: Sbds With a Mat Buffer Layermentioning

confidence: 73%

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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A major obstacle limiting diamond electronics is dislocations, which deteriorate device properties. As threading dislocations (TDs) are normally inherited from the substrate to the epitaxial layer, control and annihilation of their propagation are important. Herein, metal-assisted termination (MAT), in which the propagation of dislocations is suppressed by in situ metal doping, is proposed. Heavy W doping is realized by a hot-filament (HF) chemical vapor deposition (CVD) using heated wires at a high temperature of >2400-K. A large reduction of TD density is confirmed by cathodoluminescence studies and etch-pit analysis. The impact of dislocation reduction is investigated electrically. After insertion of the MAT buffer layer, Schottky barrier diodes (SBDs) show improved rectifying action and highly uniform characteristics even when substrates with high dislocation densities (mosaic and heteroepitaxial wafers) are used. The 3D structure of dislocation propagation is successfully captured by two-photon-excited photoluminescence (2PPL) imaging of Band-A luminescence. The 2PPL Band-A luminescence (without band-edge excitation) shows high spatial resolution in the depth direction. An abrupt decrease in TD density is captured for heteroepitaxial substrates with an inserted MAT buffer layer. The MAT technique provides an effective approach to realize high-performance diamond electronics.

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Section: Sbds With a Mat Buffer Layermentioning

confidence: 73%

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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“…The application of the finite volume method has largely been limited to modelling of microstructure type problems using RVEs and unit cell approaches. A recent review paper titled Thirty Years of the Finite Volume Method for Solid Mechanics (Cardiff and Demirdžić, 2021), lists over seventy references in the field, mainly from research group led by Ivankovic (Alveen et al, 2014;Carolan et al, 2015;Leonard et al, 2012;McNamara et al, 2014McNamara et al, , 2015 and Aboudi & Pindera (Aboudi, 1982, 2004Aboudi et al, 1999;Cavalcante et al, 2011Cavalcante et al, , 2012. The only true multiscale development in FV using the concurrent or embedded approach is reported in (Alveen et al, 2014(Alveen et al, , 2015.…”

Section: Volume X Issue X 2021mentioning

confidence: 99%

Hierarchical Rve-Based Multiscale Modeling of Nonlinear Heterogeneous Materials Using the Finite Volume Method

Tuković

Cardiff

et al. 2022

Int J Mult Comp Eng

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This paper describes the development of a hierarchical multiscale procedure within the finite volume OpenFOAM framework for modelling the mechanical response of non-linear heterogeneous solid materials. This is a first development of hierarchical multiscale model for solid mechanics using the finite volume discretisation method. In this computational procedure the information is passed between the macro and micro scales using representative volume elements (RVE), allowing for general, non-periodic microstructures to be considered. An RVE with the prescribed microstructural features is assigned to each computational point. The overall macro response accounts for the microstructural effects through the coupling of macro and micro scales, i.e., the macro deformation gradient is passed to the RVE and in turn, the homogenised micro stress-strain response is passed back to the macro scale. The incremental total Lagrangian formulation is used to represent the equilibrium state of the solid domain at both scales and its integral equilibrium equation is discretised using the cell-centred (colocated) finite volume (FV) method in OpenFOAM. The verification of the model is demonstrated using both 2D and 3D simulations of perforated elastic-plastic plates subjected to tensile loading.

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“…High-quality crystal with a flat surface ( Figure 5II) and a low defect density is necessary for the stability of power-devices with low leakage current. Two dimensional local stress distribution in an epitaxial diamond layer had been studied and was found to be between −93 to +40 MPa around a dislocation with the assumption that the Raman peak shift [122,123] image of the zone-center optical phonon was shifted at strained areas by 3 cm -1 /GPa. Selective masking by Pt nanoparticles of the existing defects on the substrate surface is to prevent threading dislocations propagating into CVD grown diamond layers.…”

Section: Growth Theory Of Scdsmentioning

confidence: 99%

Microwave Plasma CVD Grown Single Crystal Diamonds - A Review

Mallik

2016

J. Coat. Sci. Technol.

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Diamond offers a range of unique properties, including wide band of optical transmission, highest thermal conductivity, stiffness, wear resistance and superior electronic properties. Such high-end properties are not found in any other material, so theoretically it can be used in many technological applications. But the shortcoming has been the synthesis of the diamond material in the laboratory for any meaningful use. Although microwave plasma chemical vapour deposited (MPCVD) has been in practice since 1980s for the diamond growth but it is in the past 7-8 years that its potential has been realised by the industry due to capability of MPCVD to deposit diamond, pure and fast, for commercial uses. There are many CVD techniques for growing diamond but among them MPCVD can only make single crystal diamond (SCD) effectively. SCD grown by MPCVD is also superior to other forms of diamond produced in the laboratory. For example, SCD is necessary for the best electronic properties-often outperforming the polycrystalline diamond (PCD), the high pressure high temperature (HPHT) diamond and the natural diamond. In many applications the short lateral dimensions of the lab-grown diamond available is a substantial limitation. Polycrystalline CVD diamond layers grown by hot filament CVD solved this problem of large area growth, but the presence of grain boundaries are not appropriate for many uses. On the other hand, there is still limitation in the area over which SCDs are grown by MPCVD, only upto 10-15 mm lateral sizes could have been achieved so far, while there are recipes which rapidly grow several mm thick bulk SCDs. This lateral size limitation of SCDs is primarily because of the small seed substrate dimension. Although natural and HPHT diamonds may not be suitable for the intended application, still they are routinely used as substrates on which SCD is deposited. But the problem lies in the availability of large area natural SCD seeds which are extremely rare and expensive. Moreover, large diamond substrate plates suitable for CVD diamond growth have not been demonstrated by HPHT because of the associated high economic risk in their fabrication and use. Other than lateral dimension, purity of SCD is also very important for technological use. Natural diamond is often strained and defective, and this causes twins and other problems in the CVD overgrowth or fracture during synthesis. In addition, dislocations which are prevalent in the natural diamond substrate are replicated in the CVD layer, also degrading its electronic properties. HPHT synthetic diamond is also limited in size, and generally is of poorer quality in the larger stones, with inclusions being a major problem. There will be much research interest in the next 10 years for the MPCVD growth of SCD. Purer and bigger SCDs will be tried to grow with faster and reproducible MPCVD recipes. Here the MPCVD growth of SCD is being reviewed keeping in mind its huge technological significance in the next decades or so. Discoveries of the commercial productions of silico...

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A Raman spectroscopy investigation into the influence of thermal treatments on the residual stress of polycrystalline diamond

Cited by 36 publications

References 40 publications

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Hierarchical Rve-Based Multiscale Modeling of Nonlinear Heterogeneous Materials Using the Finite Volume Method

Microwave Plasma CVD Grown Single Crystal Diamonds - A Review

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