The effects of substituting silicon atoms on the stability, geometrical parameters, and electronic properties of cyclo [18]carbon (C 18 ), C 17 Si, and nine isomers of C 16 Si 2 (C 16 Si 2 (0) to C 16 Si 2 (8)) are compared and contrasted at CAM-B3LYP/6-311G* level of theory. Among C 16 Si 2 isomers, the trend of stability (based on total and binding energy*, B3LYP/6-311++G**, WB97XD/6-311G*, and CAM-B3LYP/6-311G* level of theories. Respectively, the highest and lowest band gaps belong to C 18 and C 17 Si, which also have the smallest and largest conductivities. According to the heat of atomization per carbon (ΔH at /C) and heat of formation (ΔH f ), the least thermodynamic stable species, C 16 Si 2 (0), suffers from the highest inter-atomic interaction of neighboring silicon atoms (Si-Si repulsion) and the most thermodynamic stable species, C 16 Si 2 (8), that has the furthest silicon atoms from each other. Theoretical analysis indicates that the most chemically reactive isomers are C 16 Si 2 (1), (3), and (5), which have high nucleophilicity (N = 2.752, 2.665, and 2.573 eV, respectively) and electrophilicity (ω = 0.126, 0.128, and 0.128 eV, respectively). The Si substitution increases the polarizability and activity of rings to interact with their surrounding polar species.