A Physics-Based Analytical $\hbox{1}/f$ Noise Model for RESURF LDMOS Transistors

Statistical charge-based modeling of 1/f noise in standard and high-voltage MOS transistors

“…The same conclusions as above can be extracted following a different approach using DC stress measurements [193,194,197]. In the work from this group, the effect of DC stress on flicker noise was examined while a model for flicker noise in LDMOS was proposed [196,198]. In more detail, under low gate voltage conditions where LV channel noise dominates over the contribution from drift region, the overall flicker noise of the device does not change with stress while for higher gate voltages when drift region noise becomes significant, the overall noise is increased with stress.…”

“…While DC stressing took part in high-voltage values towards the limits of the devices, 1/f noise measurements took place in linear region regime as there the noise contribution from drift region becomes significant as mentioned above. The model proposed from this group [196,198] was based on carrier number and the correlated mobility fluctuation theory as in the well known unified model [173] but has been modified to account for the fluctuations in the extended drain and the channel. Unlike [173], nonuniform trap distribution has been taken into account with respect to position in the gate oxide and band-gap energy.…”

“…Although fits of an LF noise compact model to data [195] have been claimed, no such graphs were actually provided. Furthermore, a new model for 1/f noise in LDMOSFETs is indeed proposed in [196,198] but is limited in linear region operation and does not propose a final analytical and compact equation.…”

“…Drain voltage steps were chosen very small in linear region while enough points were also measured in saturation regime up to 20V . Recent work on characterization and modeling on flicker noise of HV devices proved that while the overall noise is mostly dominated by the noise originating in the channel, the drift region generated noise is apparent and comparable to channel noise only in linear operation especially in strong inversion region of long channel devices [27,195,198]. In order this to be clear, we focus here on the behavior of flicker noise versus drain bias for all inversion regime, providing a comprehensive analysis and detailed modeling of 1/f noise in LDMOSFETs [34] based on our recently established 1/f noise model presented in the previous Section 4.…”

“…After this introduction, the fundamental physical procedure that generates 1/f noise in LDMOS is presented [193,194,195] with giving attention to the lack of complete compact models [196,197,198]. After that, the 1/f noise measurement setup as well as the devices under test are presented thoroughly and then we focus on the development of our complete 1/f noise compact model for LDMOSFETs [27] which is charge-based in agreement with EKV3 formulation.…”