A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Southwick, Richard G.; Knowlton, William B.; Bersuker, G.

doi:10.1109/ted.2011.2158825

Cited by 242 publications

(170 citation statements)

References 34 publications

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“…[19][20][21]. The most recent model that is best comparable to the one presented here is the statistical model reported by Vandelli et al 22 and Padovani 23,24 for technologically promising SiO 2 /HfO 2 structures. Aside from the different materials they investigate, their approach differs from ours, as they implemented interaction cross sections to derive transport rates instead of implementing and using the rates directly for the kinetic Monte Carlo algorithm here, cf.…”

Section: Methods -Kmc-model Of Al/alo X /Ausupporting

confidence: 78%

“…Note that the presented computational model allows for an independent adjustment of ∆E D and E rel = S ω. The Huang Rhys factor S can be determined by fitting temperature dependent j − T -1 curves showing a dominant MPTAT transport for low T. This was done using a comparable model by Vandelli et al who fitted jV-curves for several temperatures, 22 however, it was out of scope of the present study. Hence, S was fixed to a value of 10, if not stated otherwise which implied that more than 10 phonons for absorption or emission are improbable, cf.…”

Section: Methods -Kmc-model Of Al/alo X /Aumentioning

confidence: 98%

“…Phonon emission rates are modelled analogically with a c D,El multiplied by 1 − f (E x ) in the argument. Both formulae include the multiphonon transition probability L m (z) calculated by 22,33 …”

Section: Methods -Kmc-model Of Al/alo X /Aumentioning

confidence: 99%

“…52 and studied computationally in Ref. 22. In case the number of involved phonons m is equal to S the multiphonon capture (or emission) probability is maximized according to Eq.…”

Section: B Sensitivity Of the Model To The Energetic Shift ∆E D And mentioning

confidence: 99%

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Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

et al. 2016

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Ultrathin films of alumina were investigated by a compact kMC-model. Experimental jV-curves from Al/AlOx/Au-junctions with plasma- and thermal-grown AlOx were fitted by simulated ones. We found dominant defects at 2.3-2.5 eV below CBM for AlOx with an effective mass mox∗=0.35 m0 and a barrier EB,Al/AlOx≈2.8 eV in agreement with literature. The parameterization is extended to varying defect levels, defect densities, injection barriers, effective masses and the thickness of AlOx. Thus, dominant charge transport processes and implications on the relevance of defects are derived and AlOx parameters are specified which are detrimental for the operation of devices.

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Section: Methods -Kmc-model Of Al/alo X /Ausupporting

confidence: 78%

Section: Methods -Kmc-model Of Al/alo X /Aumentioning

confidence: 98%

Section: Methods -Kmc-model Of Al/alo X /Aumentioning

confidence: 99%

“…52 and studied computationally in Ref. 22. In case the number of involved phonons m is equal to S the multiphonon capture (or emission) probability is maximized according to Eq.…”

Section: B Sensitivity Of the Model To The Energetic Shift ∆E D And mentioning

confidence: 99%

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Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

et al. 2016

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“…A mechanism of TAT through the gap states in TiO 2 was proposed to be responsible for the high tunneling rate of holes. The physical theorem and calculation relevant to TAT have been discussed [25][26][27][28][29]. A multiple trap center model was used to simulate the tunneling current in the SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Lee

Lin

et al. 2016

Energies

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Abstract:In this paper, we propose a chemically grown titanium oxide (TiO 2 ) on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO 2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO 2 /Si interface was observed. X-ray photoemission spectroscopy (XPS) revealed that the chemically grown TiO 2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT) model was used to explain the high hole injection rate. According to this model, the tunneling rate can be 10 5 orders of magnitude higher for holes passing through TiO 2 than for flow through SiO 2 . With 24-nm-thick TiO 2 , a Si solar cell achieves a 33.2 mA/cm 2 photocurrent on a planar substrate, with a 9.4% power conversion efficiency. Plan-view scanning electron microscopy images indicate that a moth-eye-like structure formed during TiO 2 deposition. This structure enables light harvesting for a high photocurrent. The high photocurrent and ease of production of chemically grown TiO 2 imply that it is a suitable candidate for future low-cost, high-efficiency solar cell applications.

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Beyond Silicon MOS : An Electrical Study on Interface and Gate Dielectrics with ac Admittance Techniques

Lin

Vais

Gaur

et al. 2019

Materials Science and Technology

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Recent developments in complimentary metal–oxide semiconductor (CMOS)‐driven compound semiconductors (III–V), Germanium (Ge) and two‐dimensional (2‐D) materials technologies provide new opportunities in advancing the performance envelope of MOS device as well as the relevant electrical characterization techniques. Understanding the electrical characteristics of the metal–oxide–semiconductor (MOS) interface and defects through capacitance‐voltage (CV), conductance voltage (GV) and ac‐transconductance responses can lead to more realistic assessments of the oxide–semiconductor material systems and accurate performance predictions. In this article, interface trap density distributions D it ( E ) of Germanium, III–V compound semiconductors are characterized and/or illustrated. The characterization, modeling and temperature dependence of oxide border traps are presented as the defect study probes beyond the oxide–semiconductor interface. Finally, an investigation on 2‐D materials based MOS devices extends the ac admittance techniques beyond conventional semiconductor materials.

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A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Cited by 242 publications

References 34 publications

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Beyond Silicon MOS : An Electrical Study on Interface and Gate Dielectrics with ac Admittance Techniques

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