A numerical study of high efficiency ultra-thin CdS/CIGS solar cells

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

“…There are several BSF layers or HTLs that have been introduced between the CIGS and back electrode in the CIGS heterojunction TFSC to explore the output performances theoretically and experimentally. [ 19,21,14–17,75–77 ] The PV output parameters of the optimized CIGS solar cell with Cu 2 O HTL in comparison with other reported CIGS TFSCs with different buffers and HTLs or BSFs are demonstrated in Table 4 . The Cu 2 O HTL material shows advantageous properties such as nontoxicity, material abundance, and a relatively higher absorption coefficient than others.…”

“…In the former investigations, several thin‐film CIGS heterojunction PV device arrangements with various hole transport layers (HTLs) or back surface field (BSF) layers at back contact and alternative buffers to CdS in the front side have been proposed and assessed to realize superior solar cell characteristics experimentally [ 14–18 ] and numerically. [ 19–24 ] With a heterojunction device of MgF 2 /Ni/Al/ZnO/CdS/CIGS/Mo/SLG employing CdS buffer to combine with CIGS, the PV efficiency of 19.9% is found. [ 14 ] The experimental efficiency of heterojunction cadmium (Cd)‐free CIGS solar device with ZnS buffer prepared by the chemical bath process is obtained to be 18.1%.…”

“…[ 18 ] A conversion efficiency of 24.45% for the CIGS‐based TFSC architecture of ZnO/CdS/CIGS/SnS/Ag is determined numerically, where tin sulfide (SnS) as a BSF layer has been inserted between the back contact and 1.0 μm‐thick CIGS film. [ 19 ] The theoretical conversion efficiency has been recorded to be 24% for the heterojunction CIGS thin‐film PV structure of ZnO/i:ZnO/CdS/CIGS/SnSe, inserting 0.7 μm CIGS and 0.1 μm SnSe as BSF layer. [ 20 ] The cell efficiency of 26.30% is attained with the heterojunction configuration of Ni or Al/MgF 2 /i‐ZnO/ZnS/SDL/CIGS/Mo utilizing the 2.5 μm‐thick CIGS absorber layer.…”

Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell

“…It has been found with the experimental efficiency to fall in the range of 19-23% [14][15][16][17], while its efficiency in numerical analysis lies in between 22-26% [18][19]. The efficiency of the CIGS based cells has been tried to increase with application of SnS, MoSe2, SnSe2, and BaSi2 in BSF layer [19][20][21][22][23]. On the other hand, CGS is a wide band gap (1.5-2.2 eV) p-type semiconductor that has been employed as an absorber layer in CGSbased solar cells [24][25][26] and top cell in CGS/CIGS tandem solar cells [27][28].…”

The Effect of Environmental Factors (Temperatures & Humidity) on the Solar Cell Performance / Matlab Model

“…Sabrina Benabbas, Zahir Rouabah, Hocine Heriche and Nacer-Eddine Chelali [9], improve the performance of the CIGS solar cell by inserting the SnS layer between the absorber layer CIGS and the Mo. The performance of CIGS solar cells was improved when the absorber layer thickness was increased.…”