Abstract:This paper describes an investigation, by using numerical simulation, into the impacts of i-nc-Si : H buffer layer band gap on the photovoltaic parameters of n-i-p hydrogenated nanocrystalline silicon (nc-Si : H) solar cells. The output external cell parameters, like, the short-circuit current (JSC), the open circuit voltage (VOC), the fill factor (FF) and efficiency (Eff) are simulated by varying the mobility band gap (Eg) of i-nc-Si : H buffer layer. Also, the band diagram of nc-Si : H n-i-p solar cell, the … Show more
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