A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 2: Emphasis on Physical Aspects

Avraham, Moshe; Stolyarova, Sara; Blank, Tanya; Bar-Lev, Sharon; Golan, G.; Nemirovsky, Y.

doi:10.3390/mi11060587

Cited by 10 publications

(10 citation statements)

References 27 publications

(39 reference statements)

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“…This study closes the analysis from the one-dimensional models of the first two parts of this work [ 5 , 6 ] with the 3D CFD analysis, provided by ANSYS Fluent simulations. The first part of this work focuses on the experimental investigation of the sensing properties of the developed GMOS sensor, as well as the sensing layer deposition techniques.…”

Section: Discussionsupporting

confidence: 69%

“…The temperature of the sensing surface is regulated, with the meander heater deposited below it ( Figure 1 b). While various approaches were applied to find the correlation between the heater input voltage and the heater temperature [ 6 ], in this study the CFD modeling of the sensor heating is applied, considering the thermal exchange with the surrounding air [ 11 ]. The heater input voltage lies in the 0.5 V–3.0 V range, and the heater resistance is designed for 600 Ohm at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…The novel pellistor-like gas sensor dubbed GMOS is a low-power portable gas sensor with a rapid response time of a few seconds and a sensitivity of the sub-ppm range. In previous works, the sensing [ 5 ] and electrical [ 6 ] properties of this sensor were described. This work focuses on the investigation of the sensing mechanism, modeling the thermodynamic and chemical processes lying in its basis, by applying advanced tools for a 3D simulation of fluid dynamics.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 3: Extending the Chemical Modeling

et al. 2023

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This is the third part of the paper presenting a miniature, combustion-type gas sensor (dubbed GMOS) based on a novel thermal sensor (dubbed TMOS). The TMOS is a micromachined CMOS-SOI transistor, which acts as the sensing element and is integrated with a catalytic reaction plate, where ignition of the gas takes place. The first part was focused on the chemical and technological aspects of the sensor. In Part 2, the emphasis was on the physical aspects of the reaction micro-hot plate on which the catalytic layer is deposited. The present study focuses on applying several advanced simulation tools, which extend our understanding of the GMOS performance, as well as pellistor sensors in general. The three main challenges in simulating the performance are: (i) how to define the operating temperature based on the input parameters; (ii) how to measure the dynamics of the temperature increase during cyclic operation at a given duty cycle; (iii) how to model the correlation between the operating temperature and the sensing response. The simulated and analytical models and measured results are shown to be in good agreement.

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Section: Discussionsupporting

confidence: 69%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 3: Extending the Chemical Modeling

et al. 2023

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“…Recently, novel uncooled thermal sensors based on CMOS-SOI technology have been extensively pursued [ 8 , 9 , 10 , 11 , 12 , 13 , 14 ], mainly for IR and THz detection, and more recently for gas sensing [ 15 , 16 , 17 , 18 ]. The sensor, dubbed TMOS, is based on a suspended micro- or nano-machined transistor fabricated in standard CMOS-SOI process and released by dry etching.…”

Section: Introductionmentioning

confidence: 99%

Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

et al. 2021

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There is an ongoing effort to fabricate miniature, low-cost, and sensitive thermal sensors for domestic and industrial uses. This paper presents a miniature thermal sensor (dubbed TMOS) that is fabricated in advanced CMOS FABs, where the micromachined CMOS-SOI transistor, implemented with a 130-nm technology node, acts as a sensing element. This study puts emphasis on the study of electromagnetic absorption via the vacuum-packaged TMOS and how to optimize it. The regular CMOS transistor is transformed to a high-performance sensor by the micro- or nano-machining process that releases it from the silicon substrate by wafer-level processing and vacuum packaging. Since the TMOS is processed in a CMOS-SOI FAB and is comprised of multiple thin layers that follow strict FAB design rules, the absorbed electromagnetic radiation cannot be modeled accurately and a simulation tool is required. This paper presents modeling and simulations based on the LUMERICAL software package of the vacuum-packaged TMOS. A very high absorption coefficient may be achieved by understanding the physics, as well as the role of each layer.

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“…Moreover, the inherent gain of the transistor results in the highest temperature sensitivity compared to commercial thermal sensors [2]. By adding a heated catalytic layer above the TMOS thermal sensor, a highly sensitive chemical gas sensor, dubbed GMOS, has been reported [3][4][5]. The TMOS' highest performance is achieved in a high vacuum, whereas the GMOS is operated at ambient pressure.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Level Packaged CMOS-SOI-MEMS Thermal Sensor at Wide Pressure Range for IoT Applications

Avraham

Golan

Vaiana

et al. 2020

7th International Electronic Conference on Sensors and Applications

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Wafer-level processed and wafer-level packaged low-cost microelectromechanical system (MEMS) thermal sensors are required for a wide range of Internet of Things (IoT) and wearables applications. Recently, a new generation of uncooled thermal sensors based on CMOS-SOI-MEMS technology has emerged, with higher performance compared to commercial thermal sensors (bolometers, thermopiles, and pyroelectric sensors). The technology is implemented in commercial CMOS FABs and is, therefore, based on mature technology and implemented at a low cost. When packaged in a high vacuum, the sensors are dubbed TMOS and are applied for uncooled IR radiation. At atmospheric pressure, the sensors may function as gas sensors, dubbed GMOS. This paper focuses on the study of the thermal performance of wafer-level processed and packaged TMOS and GMOS sensors, where the pressure varies between high vacuum (0.01 Pa) and atmospheric pressure. The present study is based on analytical thermal modeling for gaining physical insight, 3D simulation is performed by ANSYS software, and finally, the measurements of the packaged devices are compared with the modeling and simulations.

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A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 2: Emphasis on Physical Aspects

Cited by 10 publications

References 27 publications

A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 3: Extending the Chemical Modeling

A Novel Miniature and Selective CMOS Gas Sensor for Gas Mixture Analysis—Part 3: Extending the Chemical Modeling

Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

Wafer-Level Packaged CMOS-SOI-MEMS Thermal Sensor at Wide Pressure Range for IoT Applications

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