2011 IEEE SENSORS Proceedings 2011
DOI: 10.1109/icsens.2011.6126925
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A novel microfabricated high precision vector magnetometer

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Cited by 9 publications
(5 citation statements)
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“…The main difference is the use of a thin SOI substrate with initial demonstrations carried out with a device layer thickness of 250 nm. [ 70 ] This thickness defines the NW thickness, whereas in‐plane dimensions are set during the high‐resolution lithography step (step a) followed by shallow etching (step b). A 0.3 μm‐thick oxide layer is used for encapsulating the NW (step c).…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…The main difference is the use of a thin SOI substrate with initial demonstrations carried out with a device layer thickness of 250 nm. [ 70 ] This thickness defines the NW thickness, whereas in‐plane dimensions are set during the high‐resolution lithography step (step a) followed by shallow etching (step b). A 0.3 μm‐thick oxide layer is used for encapsulating the NW (step c).…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…Some solutions were outlined in [6][7][8]. The challenges remain to ensure specified performance and required capabilities, such as affordability, robustness, integration, etc.…”
Section: Allmentioning
confidence: 99%
“…In general, there are two methodologies available to fabricate the released structures required for the piezoelectric energy harvesters. The first method relies upon surface micromachining techniques to undercut the released structures [ 4 , 10 , 11 , 12 , 13 , 14 ]. Typically, this method uses a sacrificial material and an etch stop, such as a Silicon-On-Insulator (SOI) wafer, to release the structural members of the device.…”
Section: Introductionmentioning
confidence: 99%