2011
DOI: 10.1088/1468-6996/12/5/054202
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A novel high-throughput fatigue testing method for metallic thin films

Abstract: Thin films are used in a wide variety of computing and communication applications although their fatigue behavior and its dependence on alloying elements are not very well known. In this paper, we present an experimental implementation of a novel high-throughput fatigue testing method for metallic thin films. The methodology uses the fact that the surface strain amplitude of a vibrating cantilever decreases linearly from the fixed end to the free end. Therefore, a thin film attached to a vibrating cantilever w… Show more

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Cited by 41 publications
(24 citation statements)
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“…In contrast to other similar fatigue test machines (Ref 22,23), the real-time phase shift technique is used to keep the loading frequency equivalent to the resonance frequency for the whole duration of the fatigue test. The phase shift technique updates the immediate loading frequency based on the measured phase shift between excitation and deflection according to Fig.…”
Section: Methodsmentioning
confidence: 99%
“…In contrast to other similar fatigue test machines (Ref 22,23), the real-time phase shift technique is used to keep the loading frequency equivalent to the resonance frequency for the whole duration of the fatigue test. The phase shift technique updates the immediate loading frequency based on the measured phase shift between excitation and deflection according to Fig.…”
Section: Methodsmentioning
confidence: 99%
“…These results can also be compared with thin film fatigue tests to further explore the size effects. 1 μm Cu thin films were sputter deposited on the Si cantilevers with dimensions of 10×1×0.2 mm 3 , and the cantilevers were then subjected to piezo actuation [40]. The failure criterion for the thin film samples needed to be chosen differently since the thin film is attached to the substrate.…”
Section: Experimental Investigation On Ofhc Cumentioning
confidence: 99%
“…The starting condition of the wafers before applying different photolithographic and structuring processes is a compound of a Si (100) wafer with a thickness of 525 µm, 0.3 µm thermal oxide (SiO 2 ), and a 0.1 µm low pressure chemical vapor deposition (LPCVD) nitride (Si 3 N 4 ) layer on top. The complete fabrication process of the stress sensors is described in detail elsewhere . The thickness of the cantilevers is 60 μm, the width of each cantilever is 400 μm and the length is varied from 800 to 3600 μm in steps of 400 μm.…”
Section: Materials and Diagnosticsmentioning
confidence: 99%