2016
DOI: 10.1038/srep33092
|View full text |Cite
|
Sign up to set email alerts
|

A novel ethanol gas sensor based on TiO2/Ag0.35V2O5 branched nanoheterostructures

Abstract: Much greater surface-to-volume ratio of hierarchical nanostructures renders them attract considerable interest as prototypical gas sensors. In this work, a novel resistive gas sensor based on TiO2/Ag0.35V2O5 branched nanoheterostructures is fabricated by a facile one-step synthetic process and the ethanol sensing performance of this device is characterized systematically, which shows faster response/recovery behavior, better selectivity, and higher sensitivity of about 9 times as compared to the pure TiO2 nano… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
30
0
1

Year Published

2017
2017
2020
2020

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 59 publications
(31 citation statements)
references
References 40 publications
0
30
0
1
Order By: Relevance
“…Owing to a strong affinity of vanadium for oxygen, it underwent fast oxidation in air, as confirmed by the observance of other V 2p peaks at 517.54 (2p 3/2 ) and 524.84 eV (2p 1/2 ), which were assigned to V 5+ (V 2 O 5 ) . Similarly, the V 2p signals for ZnIn 2 S 4 –VS 2 showed two peaks at 516.57 and 523.66 eV, which were associated with V 4+ 2p 3/2 and V 4+ 2p 1/2 , whilst the two weaker peaks at 518.06 and 525.14 eV were attributed to V 5+ 2p 3/2 and V 5+ 2p 1/2 , respectively . As shown in Figure A–C, respectively, the Zn 2p, In 3d, and S 2p binding energies for ZnIn 2 S 4 –VS 2 were all slightly shifted to lower energy compared to those for bare ZnIn 2 S 4 .…”
Section: Resultsmentioning
confidence: 70%
“…Owing to a strong affinity of vanadium for oxygen, it underwent fast oxidation in air, as confirmed by the observance of other V 2p peaks at 517.54 (2p 3/2 ) and 524.84 eV (2p 1/2 ), which were assigned to V 5+ (V 2 O 5 ) . Similarly, the V 2p signals for ZnIn 2 S 4 –VS 2 showed two peaks at 516.57 and 523.66 eV, which were associated with V 4+ 2p 3/2 and V 4+ 2p 1/2 , whilst the two weaker peaks at 518.06 and 525.14 eV were attributed to V 5+ 2p 3/2 and V 5+ 2p 1/2 , respectively . As shown in Figure A–C, respectively, the Zn 2p, In 3d, and S 2p binding energies for ZnIn 2 S 4 –VS 2 were all slightly shifted to lower energy compared to those for bare ZnIn 2 S 4 .…”
Section: Resultsmentioning
confidence: 70%
“…The most obvious factor is the chemical composition. Among the variety of appropriate materials, TiO 2 , as an important non-toxic semiconductor, shows wide potential applications in the sensing field owing to their advantages of earth abundance, chemical and thermal stability 15 . Thus, TiO 2 -based gas sensors have also been explored quite extensively.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9][10][11][12][13][14][15][16] Metal oxide semiconductors (MOS) are predominantly used in solid-state gas sensors which have been widely commercialized owing to its low cost, high sensitivity, fast response/ recovery, and simple electronic interfacing. [7][8][9][10][11][12][13][14][15][16] Metal oxide semiconductors (MOS) are predominantly used in solid-state gas sensors which have been widely commercialized owing to its low cost, high sensitivity, fast response/ recovery, and simple electronic interfacing.…”
mentioning
confidence: 99%