A New SiC-GaN-Based Two-Phase Interleaved Bidirectional DC-DC Converter for Plug-In Electric Vehicles

Moradpour, Milad; Gatto, Gianluca

doi:10.1109/speedam.2018.8445373

Cited by 27 publications

(8 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is partly attributed to the zero reverse recovery charge (Q rr ) of GaN which is due to the absence of a body diode in its structure. The zero Q rr has the following benefits [31]- [36]:…”

Section: A Device Comparisonmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

View full text Add to dashboard Cite

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.INDEX TERMS Electric vehicle, gallium nitride, high electron mobility transistor, hybrid electric vehicle, wide bandgap devices.

show abstract

Section: A Device Comparisonmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In Figure 1, a half-bridge bidirectional boost converter is shown as a typical topology for power management between the battery and the traction inverter in the application of EVs. More about the operation modes and the power stage design of the half-bridge bidirectional boost converter as the power management module in EVs can be found in [27]. Since the converter is bidirectional, there are two SiC MOSFETs as the HS/LS switches.…”

Section: Multi-objective Optimization Of the Gate Driver Parametersmentioning

confidence: 99%

Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

et al. 2020

Self Cite

View full text Add to dashboard Cite

DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor () have a contradictory effect on efficiency () and EMI. The idea of this paper is to investigate the values of these parameters using a multi-objective optimization method to optimize and EMI at the same time. To this aim, first, the effect of high and low side on and EMI in the half-bridge configuration is studied. Then, the objective functions of the optimization problem are obtained using a numerical regression method on the basis of the experimental tests. Then, the values of the gate resistors are obtained by solving the multi-objective optimization problem. Finally, and EMI of the converter in the optimum gate resistor design are compared to those in the conventional design to validate the effectiveness of the proposed design approach.

show abstract

“…Non-isolated DC-DC converters for EV-related applications were discussed in References [11,[65][66][67][68][69][70][71][72][73][74]. Moradisizkoohi et al [65] proposed a half-bridge, three-port, three-level converter that could supply the critical loads using the energy stored in battery if photovoltaic (PV) generation was not available or insufficient.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

“…Boundary conduction mode (BCM) and soft turn-on enabled switching frequencies up to hundreds of kHz. In Reference [72], both SiC-and GaN-based switching devices were used to build a 300/600-V, 5-40-kW, 10-kHz two-phase (~20 kW per phase) interleaved bidirectional converter. WBG devices provided high-efficiency power conversion while avoiding the complexity of multi-phase topology.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

View full text Add to dashboard Cite

Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

show abstract

A New SiC-GaN-Based Two-Phase Interleaved Bidirectional DC-DC Converter for Plug-In Electric Vehicles

Cited by 27 publications

References 19 publications

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

Review of GaN HEMT Applications in Power Converters over 500 W

Contact Info

Product

Resources

About