A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

Automated MOS Transistor Gamma Degradation Measurements Based on LabVIEW Environment

“…This is very useful when we want to rapidly get information on the quality of irradiated oxide and SiO 2 /Si interface and also if we intend to study the annealing of both radiation-induced oxide-and interface-trap. Equations 9 and 11 shows clearly that ΔN IT and ΔN OT are is just dependent on experimental parameters ΔI CPM and ΔV TH (Djezzar et al, 2004). These quantities are estimated from I CP (V B ) curves at high frequencies.…”

“…Traps at or near the semiconductor/gate dielectric interface can cause degraded transconductance (Doyle et al, 1990), the shifting of threshold voltage (Tsuchiya et al, 1987) and may lead to dielectric breakdown (Chen et al, 1985). In order to improve the resistance of MOSFET devices to these effects, it is necessary to have a reliable method of determining the densities of both interface traps and oxide traps (Djezzar et al, 2004). The reliable test procedure to predict radiation response of integrated circuits (IC's) from standard test laboratory, for example in space, is very important and requires a development of simple and rapid electrical characterization techniques easily mountable in production line.…”

Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

“…The OTCP extraction method [11] and [12] consists of combining both high-and low-frequency C-P measurements. The I cp -V b standard curves were extracted using a trapezoidal signal with an amplitude of 4V, a fixed rise and fall time of about 10 ns, and a frequency of 1MHz (High frequency, f h ) and 100Hz (Low frequency, f l ).…”

“…From high and low frequency plots, we are able to extract interface-, oxide-, and border-trap densities. More details concerning OTCP are given in [11] and [12].…”

“…To surmount these limitations and provide self consistency measurements, Djezzar et al [11] and [12] have developed a new method, termed OTCP. This method is based on charge pumping [13] without a need for any additional technique and is applied on a single transistor.…”