A new method for determining the FET small-signal equivalent circuit

Abstract

The method of differential-Thompson transformation (DTTR) is applied for the first time to the field of electromagnetic scattering. Complex objects and their computational areas are transformed by DTTR to a regular area. By applying the finite-difference-Time-Domain (FDTD) technique, the fieM distribution is solved conveniently. Numerical a mples show good comparison with exact results. 0 ABSTRACT A highly accurate absorbing boundary operation has been devebped to efficiently and accurately truncate the computational domain when using the finite-di~erence-timeime-domain method. Referred to as the compkmentary operators method (COM), this technique consim of averaging the solutions of two indepndent boundary operators that are complementary to each other. Because of its independence of the wave number k,, the boundary operation can significantly reduce arti$cial reflections arising from obliquely incident traveling waves as well as evanescent waves. 0 1995 John Wley & Sons, lnc.

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

“…The interior of red box is intrinsic part, and exterior is the parasitic part. The parasitic elements are extracted through "cold FET" 25,26 S-parameters by using the extraction method in Ref. 18 and numerical optimization.…”

On the small signal modeling of advanced microwave FETs: A comparative study

“…Subsequently, the inductances and resistances can be respectively determined from the real and imaginary parts of the impedance (Z-) parameters of the resistive inductive T network representing the device under high gate voltage at high frequencies. By applying a higher voltage to the gate, the increases of the gate current and of the two dimensional electron gas (2DEG) carrier density lead respectively to a so large reduction of R y and R ch that, in general, the contribution of the intrinsic capacitances can be neglected [6][7][8][9]. The advantage of using a forward bias condition for determining these parasitic ECPs is that under this bias condition the influence of the intrinsic RC parallel networks becomes less and, as a consequence, the parasitic ECP extraction resolution increases.…”

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

“…Several commercially available programs exist which optimize some or all of these fifteen parameters [2], although in general the measured S-parameter data are approximated in an acceptable manner by these methods and the resulting element values depend on the starting values and may differ considerably from their actual physical values [1][2][3]. The analytical methods [4][5][6][7] on the other hand allow us to extract the equivalent circuit parameters in a straightforward manner. The most favorable extraction method was originally proposed by Minasian et al [7] and was later modified by Dambrine et.al [5] and Berroth & Bosch [6].…”

“…The analytical methods [4][5][6][7] on the other hand allow us to extract the equivalent circuit parameters in a straightforward manner. The most favorable extraction method was originally proposed by Minasian et al [7] and was later modified by Dambrine et.al [5] and Berroth & Bosch [6]. This method first extracted the series and shunt parasitic elements of the device by measuring the S parameters under suitable passive modes of its operations.…”