A new Cu(NbCNx) film and some of its characteristics

Lin, Cherng‐Yuan

doi:10.1016/j.mee.2020.111217

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…13)16) that I was solely or deeply involved with in the past studies, we observe that the thermal stability® i.e. remaining in physical existence at high temperatures® of Cu(RuN x ) alloy films reaches 680°C, 13) and that of Cu(RuHfN x ) 14) and Cu(NbCN x ) 15) 720°C, which is quite impressive comparing to that of pure Cu, merely 200°C. On the resistivity issue, the resistivity of Cu(AgN x ) films 16) reaches 2.2 µ³ cm after annealing at 600°C.…”

Section: Introductionmentioning

confidence: 67%

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Lin

2022

Mater. Trans.

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Copper (Cu) alloy thin films deposited on barrierless substrates via sputtering and annealing processes have been essential for numerous microelectronic products and continue to be so in the new nanometer-range manufacture era. The search for better new films thus is crucial for further technical and manufacture advancement. The requirements on the new films lie in their stability in existence under high-temperature manufacture environments, low electric resistivity, less leakage current under various electric fields, and sufficient adhesion strength. For the search and advancement, I have developed a new type of films by co-sputtering impurities of niobium, Nb, and zirconium, Zr, with Cu within a vacuum chamber without any gas or with nitrogen (N) under low pressure, resulting in new Cu(NbZr) or Cu(NbZrN x ) films whose fabrication processes and test results are detailed herein. The new type of films displays good physical features and seems desirable for microelectronic manufacture and to material science, too.

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Section: Introductionmentioning

confidence: 67%

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Lin

2022

Mater. Trans.

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“…It is essential to explore a better method other than using the mentioned barrier. Thus, a barrierless structure has become an unavoidable direction for development [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Wang,

Guo,

Dong

et al. 2024

Coatings

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In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu2O, NiO, and SiO2.

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A newly developed Cu(Rh) alloy film and its characteristics and applications

Lin

2024

AAPPS Bull.

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A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere. The new films are next annealed at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 μΩ cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 μΩ after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is then thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11 ~ 12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8 nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like. Graphical Abstract A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere and then annealing the new films at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 mW cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 mW after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is next thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11~12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against Staphylococcus aureus (S. aureus) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8-nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like.

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A new Cu(NbCNx) film and some of its characteristics

Cited by 3 publications

References 11 publications

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Newly-Developed Cu(NbZrN<sub>x</sub>) Copper-Alloy Films for Microelectronic Manufacture Advancement

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

A newly developed Cu(Rh) alloy film and its characteristics and applications

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