volume 109, issue 1, PK75-K79 1982
DOI: 10.1002/pssb.2221090165
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Abstract: The existence of a transition region at the Si-Si02 interface seems to be well established /l/. F o r the investigation of the properties of this system the study of SiOx is a necessary task to get a valid description of the whole interface system.The local atomic structure of SiOx can be visualized a s being built up by (1 )To calculate the electrbnic structure from the knowledge of the local atomic structure the cluster-Bethe-lattice method (CBLM) has proved to be a powerful tool /2 to 4/. Lannoo and Allan …

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