A neutron detector based on an ITO/p-Si structure

Sueva, D.; Georgiev, S.; Nedev, N.; Toneva, A.; Chikov, N.

doi:10.1016/s0042-207x(00)00183-4

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…A nonlinear curve is seen for as-deposited and 400 -C annealed sample. We suppose this is Schottky contact, with barrier height of 0.78 eV, between the interface of ITO and Si-capping layer [21]. But in the case of 600 -C annealing, the I -V curve becomes linear.…”

Section: Resultsmentioning

confidence: 98%

Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

et al. 2005

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Section: Resultsmentioning

confidence: 98%

Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

et al. 2005

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“…Saim et al (7) used rectifying ITO/p-Si to fabricate heterojunction solar cells, where ITO acts as n-type material and anti-reflection coating. Seuva et al (8) fabricated ITO/p-Si diodes to act as neutron detectors. However, in several works, authors like Malik et al (9) and Ashok et al (10) fabricated diodes with ITO/n-Si structure.…”

Section: Resultsmentioning

confidence: 99%

Thickness Dependence of Indium-Tin Oxide Thin Films Deposited by RF Magnetron Sputtering

Damiani

Mansano

2010

ECS Trans.

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Indium-tin oxide is a ceramic material that exhibits electrical conductivity and optical transparency. It is used as transparent electrode in many optoelectronic devices. Among the possible deposition methods, magnetron sputtering is one of the most attractive techniques due to its good reproducibility and possibility of uniform deposition over large areas. In this work, indium-tin oxide thin films with different deposition times were obtained by radio frequency magnetron sputtering without intentional substrate heating. Their optical, electrical, physical and chemical properties were investigated.

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“…Due to its relatively low resistivity (∼10 −6 m) and its good transmittance (∼80%) in the visible and near-infrared (NIR) ranges, ITO finds applications in optoelectronic devices, for instance as transparent electrodes for flat panels and solar cells [2]. It has recently also found application as a neutron detector [3]. The free electrons responsible for the relatively low resistivity come from oxygen vacancies, which donate electrons, and from the Sn doping.…”

Section: Introductionmentioning

confidence: 99%

Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

Martino

Luches

Fernández

et al. 2001

J. Phys. D: Appl. Phys.

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Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6×10-6 Ω m) was measured for samples deposited on moderately heated (200 °C) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (~6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.

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A neutron detector based on an ITO/p-Si structure

Cited by 7 publications

References 9 publications

Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

Thickness Dependence of Indium-Tin Oxide Thin Films Deposited by RF Magnetron Sputtering

Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

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