A Monolithic-Integrated Broadband Low-Noise Optical Receiver with Automatic Gain Control in 0.25μm SiGe BiCMOS

Dziallas, Giannino; Fatemi, Adel; Malignaggi, Andrea; Kahmen, Gerhard

doi:10.1109/sirf51851.2021.9383400

Cited by 2 publications

(1 citation statement)

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“…18(c) shows a cross section of this EPIC technology, which leverages local siliconon-insulator (SOI) for the photonic components and selective epitaxial grown bulk silicon for the high-performance electronic components [180]. Beside applications related to high-speed optical communication [181]- [184], EPIC technologies have also successfully been applied for sensor applications [185], [186], showing its great potential. Significant progress has been made recently, pushing the Ge-photodiode bandwidth toward 110 GHz [187], which will enable the use of this technology for next-generation silicon photonic data communication.…”

Section: B Electronic-photonic Integrationmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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