A model of non-Ohmic conduction in ZnO varistors

Glot, A.B.

doi:10.1007/s10854-006-0019-y

Cited by 24 publications

(16 citation statements)

References 23 publications

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“…It is necessary to mention that according to the developed approach [12,16,17], the obtained dependence φ(E) (Fig. 4, curve 2) reflects a shape of the dependence on the electric field (Fig.…”

Section: To 5)mentioning

confidence: 89%

“…The nonlinearity coefficient is defined by the expression β = (E However, the empiric j (E) expression and empiric parameter β 1 cannot enable in understanding the mechanism of non-ohmic conduction. Therefore, starting from the assumption that non-ohmic conduction in ZnO and SnO 2 varistor ceramics is attributed to the decrease of the barrier height with electric field, the expression for the current-voltage characteristic was obtained [12,16,17]:…”

Section: Introductionmentioning

confidence: 99%

“…In the case of thermionic emission across the barrier, the parameter α is proportional to the rate of change in the barrier height φ with the electric field E [12,16,17]:…”

Section: Introductionmentioning

confidence: 99%

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Non-ohmic conduction in tin dioxide based ceramics with copper addition

Gaponov¹,

Glot²

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The current-voltage characteristics and temperature dependences of electrical conductivity in SnO 2 -Co 3 O 4 -Nb 2 O 5 -Cr 2 O 3 -CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and the electric field is decreased down to (at ). It makes CuO addition useful for the preparation of SnO (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuObased intergranular phase.

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Section: To 5)mentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

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Non-ohmic conduction in tin dioxide based ceramics with copper addition

Gaponov¹,

Glot²

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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“…34,[46][47][48] Using ideas of percolation, a phenomenological approach to nonOhmic conduction in ZnO varistor was developed and expression J ¼ 0 E expðEÞ (here J is the current density and E is the electric field) was obtained. 49 The mentioned methods were used for the analysis of current-voltage (IðUÞ) characteristic 34,[41][42][43][44][45][46][47]49 and temperature dependence of conductivity 48 in ZnO varistor. However, application of such models to a study of degradation in varistor ceramics seems to be promising.…”

Section: Introductionmentioning

confidence: 99%

Percolation effects in dc degradation ofZnOvaristors

2015

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For quantitative estimation of the degree of electrical disorder (electrical inhomogeneity) in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample, the comparison of threshold electric fields (onsets of highly nonlinear current-voltage characteristics) in ceramics and single grain boundary (GB) is suggested and approved. At dc degradation similar behavior of the current-voltage characteristics of ZnO varistor ceramics and single GB is observed. The percolation model of Shklovskii-De Gennes is applicable for the description of a disorder in ZnO varistor ceramics. The degree of the disorder in ZnO varistor ceramics is not dependent on the duration of dc degradation at least at degradation time below 60 h. At voltages close to the onset of a highly nonlinear region of current-voltage characteristic the correlation radius of infinite cluster is $ 5 times greater than the average grain size.

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“…The effects of doping ZnO based ceramics with few mole percentages of different oxides of some metals, e.g., Bi, Sb, Co, Mn, Ni, Cr, Al and Fe, have been investigated by several authors [8][9][10][11][12][13][14][15][16]. Reported results of those studies show that the important physical properties mentioned above are closely related to the compositions and microstructures, i.e., they are dependent on density, grain size, morphology, distribution of any secondary phases and porosity.…”

Section: Introductionmentioning

confidence: 99%

Microhardness, microstructure and electrical properties of ZVM ceramics

et al. 2014

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Abstract:The effect of Mn 3 O 4 addition on microhardness, microstructure and electrical properties of vanadium oxide doped zinc oxide varistor ceramics is systematically investigated. The Vicker's microhardness H V has decreased with increasing the amount of Mn 3 O 4 . Also, the average grain size has decreased from 27.51 μm to 19.55 μm with increasing the amount of Mn 3 O 4 up to 0.50 mol%, whereas an increase in Mn 3 O 4 up to 0.75 mol% has caused the average grain size to increase and then it decreases with increasing Mn 3 O 4 from 0.75 mol% to 1.00 mol%. The sintered density has decreased from 5.

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A model of non-Ohmic conduction in ZnO varistors

Cited by 24 publications

References 23 publications

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Percolation effects in dc degradation ofZnOvaristors

Microhardness, microstructure and electrical properties of ZVM ceramics

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