A Model for Hole Trapping-Detrapping Kinetics During NBTI in p-Channel FETs: (Invited paper)

Choudhury, Nilotpal; Parihar, Narendra; Goel, Nilesh; Thirunavukkarasu, A.; Mahapatra, S.

doi:10.1109/edtm47692.2020.9117913

Cited by 4 publications

(12 citation statements)

References 27 publications

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“…Therefore, the relative contribution of the ΔVHT component on overall ΔVT is higher in D2 devices due to the higher number of pre-existing defects, although VIT still dominates overall VT for both devices. The subcomponents are not explicitly shown here for brevity, refer to [12], [15] for additional details. This shows the ability of the ABDWT enabled BAT framework to explain NBTI in devices with different N% in the gate stack.…”

Section: Resultsmentioning

confidence: 99%

“…All process agnostic free parameters are listed in [12]. Fig.3 illustrates the ABDWT model for VHT kinetics used in the enhanced BAT framework [15], [16]. It has two states E1 (uncharged) and E2 (charged) that are separated by a barrier (EB).…”

Section: Device Details and Measurement Descriptionmentioning

confidence: 99%

“…The double interface Reaction-Diffusion (RD) model is used for the time kinetics of interface trap generation and passivation (density is NIT), and their contribution (VIT) due to charge occupancy is modeled by the Transient Trap Occupancy Model (TTOM). Empirical stretched-exponential equations are used for TTOM and VHT in [12], and VHT equations are replaced using the Activated Barrier Double Well Thermionic (ABDWT) model, first proposed in [14], in recent reports [15], [16]. The empirical model is used for VOT [12].…”

Section: Introductionmentioning

confidence: 99%

“…Such variations can be manually done or modeled with empirical equations. However, VHT is modeled by ABDWT in [15], [16], and being a physical model it can automatically calculate the hole trapping and detrapping kinetics across all experimental conditions. Furthermore, the stochastic version of ABDWT can explain Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments as shown in [28].…”

Section: Introductionmentioning

confidence: 99%

“…This paper presents a comprehensive overview of our recent conference reports [15], [16]. NBTI time kinetics is modeled using BAT with ABDWT for VHT and validated against a wide range of experimental data.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

Choudhury

Parihar

Goel

et al. 2020

IEEE J. Electron Devices Soc.

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The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift (VT) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated contributions from the trap generation at the channel/gate insulator interface (VIT) and gate insulator bulk (VOT), and hole trapping in pre-existing gate insulator bulk traps (VHT). The VIT kinetics is simulated by the Reaction-Diffusion (RD) model. The empirical VHT model used earlier is now substituted by the Activated Barrier Double Well Thermionic (ABDWT) model. The ABDWT model is also used to verify the time constant of the electron capture induced fast VIT recovery. Empirical equations are used for VOT. The enhanced BAT modeling framework is validated using measured data from a wide range of experimental conditions and across different device architectures and gate insulator processes.

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Section: Resultsmentioning

confidence: 99%