A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure

Zhou, Haijing; Wang, Wenzhe; Chen, Chaoyong; Zheng, Yaohui

doi:10.1109/jsen.2014.2371893

Cited by 33 publications

(19 citation statements)

References 19 publications

(57 reference statements)

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“…[2][3][4][5] In our former works, a high-performance photodetector has been obtained for the readout of squeezed state noise based on the bootstrapped structure and differential fine tuning circuit. [6][7][8] For a PDH locking system, the signal coupled into the photodetector is narrow-band one at the modulation frequency, conventionally a broad bandwidth photodetector magnifies the signal and noise in the whole band, which is detrimental to improve the signal to noise ratio. As a result, the performance of squeezed state system is dropped.…”

Section: Introductionmentioning

confidence: 99%

Resonant photodetector for cavity- and phase-locking of squeezed state generation

Chen

Jin

et al. 2016

Review of Scientific Instruments

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Based on the requirement of squeezed state generation, we build the phase relationship between two electronic local oscillators for the cavity- and phase-locking branches, and a 2-way 90° power splitter is adopted to satisfy the phase relationship simultaneously, which greatly simplifies the experimental setup and adjusting process. A LC parallel resonant circuit, which is composed by the inherent capacitance of a photodiode and an extra inductor, is adopted in the resonant photodetector to improve the gain factor at the expected frequency. The gain of the resonant photodetector is about 30 dB higher than that of the broadband photodetector at the resonant frequency. The peak-to-peak value of the error signal for cavity-locking (phase-locking) with the resonant photodetector is 240 (260) times of that with the broadband photodetector, which can improve the locking performance on the premise of not affecting the squeezing degree.

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Section: Introductionmentioning

confidence: 99%

Resonant photodetector for cavity- and phase-locking of squeezed state generation

Chen

Jin

et al. 2016

Review of Scientific Instruments

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“…CMOS based precision amplifier was superior because of cheaper wafer prices, reduced offset voltage, and so on. A transimpedance amplifier (TIA) based low-noise, wideband amplifier used in detecting 1064mm laser generated noise in quantum optical experiment was reported in [19]. The TIA, which conceptually, is a current-to -voltage converter and most frequently implemented using operational amplifier, performed better than single-junction field effect transistor based amplifier.…”

Section: A Sic Jfet Application In Rectifiers and Amplifiers Circuitsmentioning

confidence: 99%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

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“…Considering the maturity of commercial photodiode and PCB layout technology, TIA has drawn our most attention. Referring to the most reported BHDs, the mentioned excellent operational amplifiers such as OPA847 (Texas Instruments) [1,13,[17][18][19][20], AD8015 (Analog Devices), LTC6409 (Linear Technology) [21] and LTC6268 (Linear Technology) are more suitable for low-frequency applications according to the official datasheets. Thus with these chips, the QCNR and CMRR can be well optimized only in a narrow band, which will deteriorate when the bandwidth is expended.…”

Section: Introductionmentioning

confidence: 99%

1.2-GHz Balanced Homodyne Detector for Continuous-Variable Quantum Information Technology

Zhang

Li³

et al. 2018

IEEE Photonics J.

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Balanced homodyne detector (BHD) that can measure the field quadratures of coherent states has been widely used in a range of quantum information technologies. Generally, the BHD tends to suffer from narrow bands and an expanding bandwidth behavior usually traps into a compromise with the gain, electronic noise, and quantum to classical noise ratio, etc. In this paper, we design and construct a wideband BHD based on radio frequency and integrated circuit technology. Our BHD shows bandwidth behavior up to 1.2 GHz and its quantum to classical noise ratio is around 18 dB. Simultaneously, the BHD has a linear performance with a gain of 4.86k and its common mode rejection ratio has also been tested as 57.9 dB. With this BHD, the secret key rate of continuous-variable quantum key distribution system has a potential to achieve 66.55 Mbps and 2.87 Mbps respectively at the transmission distance of 10 km and 45 km. Besides, with this BHD, the generation rate of quantum random number generator could reach up to 6.53Gbps.Index Terms: Balanced homodyne detector, bandwidth, quantum to classical noise ratio, common mode rejection ratio, continuous-variable quantum key distribution, quantum random number generator.Vol. , No. ,

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A Low-Noise, Large-Dynamic-Range-Enhanced Amplifier Based on JFET Buffering Input and JFET Bootstrap Structure

Cited by 33 publications

References 19 publications

Resonant photodetector for cavity- and phase-locking of squeezed state generation

Resonant photodetector for cavity- and phase-locking of squeezed state generation

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

1.2-GHz Balanced Homodyne Detector for Continuous-Variable Quantum Information Technology

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