A load-insensitive quad-band GSM/EDGE SiGeC-bipolar power amplifier with a highly efficient low power mode

Bakalski, W.; Zannoth, M.; Asam, M.; Thomann, W.; Kapfelsperger, B.; Pfann, Peter; Berkner, J.; Hepp, C.; Steltenpohl, A.; Osterreicher, W.; Rampf, E.

doi:10.1109/rws.2008.4463464

Cited by 6 publications

(1 citation statement)

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“…Process technologies providing fast, high-breakdown voltage transistors for power amplifiers include GaAs HBT processes [1]- [5], LDMOS processes [6], [7], SiGe HBT processes [8], [9] or other customized processes [10], [11]. Despite superior breakdown voltages compared to Si CMOS technologies for similar RF performance, these approaches often also require off-chip passive components (e.g., inductors and couplers).…”

Section: Introductionmentioning

confidence: 99%

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Aoki¹,

Kee²,

Magoon

et al. 2008

IEEE J. Solid-State Circuits

112

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Abstract-Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closedloop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135 C under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.Index Terms-CMOSFET power amplifiers, CMOS RF, distributed active transformer (DAT), global system for mobile communications (GSM), power control, reliability.

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