A Hybrid Transformer-Based CMOS Duplexer With a Single-Ended Notch-Filtered LNA for Highly Integrated Tunable RF Front-Ends

Kwon, Kuduck; Kim, Sinyoung; Son, Ki Yong

doi:10.1109/lmwc.2018.2869302

Cited by 26 publications

(14 citation statements)

References 7 publications

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“…There is a trade-off between DC power consumption and power handling performance. For the given LNA, the input matching circuit dominates the NF performance, while the output matching has sight effect on the noise [27,28]. Therefore, the gain is mainly considered in the output matching.…”

Section: Circuit Designmentioning

confidence: 99%

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process. An asymmetrical SP3T switch architecture is incorporated to enable the receiver to operate in four modes. The exploration of impedance and voltage gain behavior of the proposed LNA help to establish the matching network and alleviate the trade-off between noise figure (NF) and gain performance. In LNA high gain mode, the implemented front-end receiver shows 1.7 dB of NF and 6dBm of input third-order intercept point (IIP3) with 20 dB of power gain drawing 11 mA of current from 5 V power supply at 2.4 GHz. All input and output return loss had exceeded 10 dB with fully on-chip impedance matching network. In bypass mode, the measured insertion loss of typically 7.5 dB is achieved.

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Section: Circuit Designmentioning

confidence: 99%

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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“…Q: SiGe HBT (4 120 nm 480 nm) f r1 of the conventional L-C filter with an inductance of 83.7 pH and a capacitance of 100 fF is 55 GHz, and f r2 of the proposed filter with an inductance of 83.7 pH, a capacitance of 100 fF, R S = 0-10 kΩ, and R P = 0.5-10 kΩ is 2 to 55 GHz per (3) and (4). Figure 8 presents f r1 of the conventional L-C filter and f r2 of the proposed filter with R S and R P for R S = 0-10 kΩ.…”

Section: Filter Designmentioning

confidence: 99%

“…The performance of systems using LNAs that have such an unwanted gain can be degraded by the intermodulation distortion of the signals at operating frequencies and the high signals below operating frequencies. To solve these LNA problems, direct current (DC) biasing circuits in LNAs were designed to suppress the unwanted signal gain at low frequencies [3] and an inductor-capacitor (L-C) resonator was used to filter unwanted system interference [4]. In this study, a SiGe 130-nm BiCMOS E-band LNA MMIC was designed to suppress unwanted signal gain below operating frequencies and improve the signal gain characteristics at operating frequencies using an impedance-controllable filter in an interstage matching circuit.…”

Section: Introductionmentioning

confidence: 99%

E‐band low‐noise amplifier MMIC with impedance‐controllable filter using SiGe 130‐nm BiCMOS technology

et al. 2020

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In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R s) and parallel (R p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S 21 at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S 21 of 16 dB to 21 dB, input matching (S 11) of-14 dB to-5 dB, and output matching (S 22) of-19 dB to-4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

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“…Electrical balanced DUX (EBD), first published in [7], is an attractive approach in passive DUXs. However, most of the developed EBDs only work at low frequencies below 2.5 GHz [7–11]. The EBD reported in [12] works across 27–34 GHz with high isolation between TX and RX in the narrow band of 30.1–32.6 GHz.…”

Section: Introductionmentioning

confidence: 99%

25–53 GHz ultra‐wideband high‐isolation passive balanced duplexer on 0.18‐ μ m BiCMOS for 5G applications

Hsiao

Nguyen

2020

IET Microwaves, Antennas & Propagation

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A Hybrid Transformer-Based CMOS Duplexer With a Single-Ended Notch-Filtered LNA for Highly Integrated Tunable RF Front-Ends

Cited by 26 publications

References 7 publications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

E‐band low‐noise amplifier MMIC with impedance‐controllable filter using SiGe 130‐nm BiCMOS technology

25–53 GHz ultra‐wideband high‐isolation passive balanced duplexer on 0.18‐ μ m BiCMOS for 5G applications

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