A hybrid radiation detector based on a plasma display panel

Cho, Sung-Ho; Lee, Rena; Yun, Min; Jang, Geundoo; Park, Ji-Koon; Choi, Jang Yong; Nam, Sang-Hee

doi:10.1016/j.nima.2009.06.034

Cited by 6 publications

(5 citation statements)

References 11 publications

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“…The dark current of an a-Se detector is typically 0.15 ∼ 0.55 nA/cm 2 in the bias range of 300 ∼ 900 V. The dark current of the Xe 80%-He 20% detector was 0.124 ∼ 0.321 nA/cm 2 in the bias range of -300 ∼ -1800 V and it was about one-third of the dark current of the a-Se detector. The calculated SNR of the Xe 80%-He 20% detector was around 64 and it was about the one-third of the a-Se detector [10].…”

Section: Experimental Results With Fabricated Detectorsmentioning

confidence: 93%

Characteristic of a PDP-based radiation detector in Xe-He mixture gas

et al. 2013

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In this study, we have investigated a 2-dimensional gas detector based on plasma display technology as a candidate for the flat-panel radiation detector. Using the Geant4 and Garfield codes, that simulate the passage of particles through matter, we examined the dependence of X-ray absorption and multiplication factors on the Xe-He gas mixture. Prototype detectors, with four different gas mixtures, were designed and fabricated based on the results from the simulations. The performance of four detectors was evaluated by measuring the collected charge density, dark current density and sensitivity. The maximum collected charge occurred when the Xe 80%-He 20% gas mixture was 1.216 μC/cm2 at -1800 V. The dark current of this detector varied between 0.124 and 0.321 nA/cm2 in the bias range of -300 to -1800 V, which is approximately one-third of the dark current density of an a-Se based detector, in this range. The sensitivity of Xe 80%-He 20% detector was 0.246 nC/mRcm2 at 0.61 V/μm. It is about a tenth lower than that of an a-Se based detector at 10 V/μm.

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Section: Experimental Results With Fabricated Detectorsmentioning

confidence: 93%

Characteristic of a PDP-based radiation detector in Xe-He mixture gas

et al. 2013

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“…Currently, the existing literature shows that material damage caused by ion bombardment is one of the main reasons for the failure of the multiplier for low-energy/high-energy ion detection, such as in the time-of-flight mass spectrometer [6] . It has been mentioned in related reports that in the design and manufacture of devices that may be directly bombarded by ions, such as field effect transistors, plasma displays, and cold cathodes of electron emission devices, the service life of the devices is improved by the use of corresponding ion bombardment-resistant materials [7][8][9][10] . While there is not much work on the ion bombardment resistance of the microchannel plate; not to mention it can be improved by the design and optimization of the glass material constitution of the microchannel plate.…”

Section: Introductionmentioning

confidence: 99%

Effect of SrO, ZrO2 on ion bombardment-resistant for the lead-silicate glass-based microchannel plate

Cai,

Li,

Liu

et al. 2023

AOPC 2023: Laser Technology and Applications; And Optoelectronic Devices and Integration

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“…However, the difficulty in manufacturing high resolution devices is slowing down the development of this technology. Sungho Cho proposed a new type of radiation detector, called hybrid PDP detector based on the integration of a photoconductor in a coplanar PDP . The detector has the same structure as that of a conventional PDP, except for the photoconducting layer, and it shows a good signal response and linearity.…”

Section: Introductionmentioning

confidence: 99%

“…Sungho Cho proposed a new type of radiation detector, called hybrid PDP detector based on the integration of a photoconductor in a coplanar PDP. 4,5 The detector has the same structure as that of a conventional PDP, except for the photoconducting layer, and it shows a good signal response and linearity. The detector is expected to have low cost, because it can apply the fabrication and material technology widely used in PDPs.…”

Section: Introductionmentioning

confidence: 99%

Flat panel detector based on a shadow mask plasma display panel

et al. 2014

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A flat panel detector based on the structure of a shadow mask plasma display panel is analyzed in terms of the electron amplification factor when used in the Townsend mode. The detector consists of a metal shadow mask and two ultra‐thin glass substrates with electrodes depositing on them. The shadow mask divides the detecting area into arrays of independent cells. The electron gain and linearity of the device are investigated by simulation based on the particle‐in‐cell/Monte Carlo collision model. Similar experiments are carried out. Both experimental and simulation results show that the linearity of the detector is significant. The applied voltages and the effective cathode area are parameters affecting its gain. As the avalanche process in the center of the cell with small electric field strength is much smaller than that near the shadow mask edge, the gain increases exponentially with the anode voltage but decreases with the negative shadow mask voltage. The balance between effective cathode area and high electric field intensity near the shadow mask edge provides room for future optimization of the detector. In conclusion, the flat panel detector is a promising component in a detection system for high energy radiation, and the wide application of the device is expected.

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A hybrid radiation detector based on a plasma display panel

Cited by 6 publications

References 11 publications

Characteristic of a PDP-based radiation detector in Xe-He mixture gas

Characteristic of a PDP-based radiation detector in Xe-He mixture gas

Effect of SrO, ZrO2 on ion bombardment-resistant for the lead-silicate glass-based microchannel plate

Flat panel detector based on a shadow mask plasma display panel

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