A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

Baek, Jong‐Min; Yin, Demin; Liu, Na; Omkaram, I.; Jung, Chul Woo; Im, Healin; Hong, Seongin; Kim, Seung Min; Hong, Young Ki; Hur, Jaehyun; Yoon, Youngki; Kim, Sunkook

doi:10.1007/s12274-016-1291-7

Cited by 113 publications

(68 citation statements)

References 44 publications

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“…Chemical vapor deposition (CVD) is a low-cost, fast and scalable technique to synthesize various TMDCs [17][18][19]. Although CVD-grown MoSe 2 crystals, films, ribbons, and van der Waals heterostructures [20][21][22][23] has been widely reported for versatile applications in transistors, photodetectors and sensors [24][25][26], it is still a great challenge to controllably synthesize high-quality monolayer MoSe 2 with large grain size and good uniformity simultaneously. In a typical CVD growth process, the synthesis of atomically thin crystals is delicate and sensitive to growth parameters.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition

Wang

Yang

et al. 2019

Nanomaterials

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Two-dimensional (2D) layered semiconductor materials, such as transition metal dichalcogenides (TMDCs), have attracted considerable interests because of their intriguing optical and electronic properties. Controlled growth of TMDC crystals with large grain size and atomically smooth surface is indeed desirable but remains challenging due to excessive nucleation. Here, we have synthesized high-quality monolayer, bilayer MoSe2 triangular crystals, and continuous thin films with controlled nucleation density via reverse-flow chemical vapor deposition (CVD). High crystallinity and good saturated absorption performance of MoSe2 have been systematically investigated and carefully demonstrated. Optimized nucleation and uniform morphology could be achieved via fine-tuning reverse-flow switching time, growth time and temperature, with corresponding growth kinetics proposed. Our work opens up a new approach for controllable synthesis of monolayer TMDC crystals with high yield and reliability, which promote surface/interface engineering of 2D semiconductors towards van der Waals heterostructure device applications.

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Section: Introductionmentioning

confidence: 99%

Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition

Wang

Yang

et al. 2019

Nanomaterials

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“…Besides MoS 2 , other metal dichalcogenides such as WS 2 , MoSe 2 and SnS 2 have also shown promise for gas sensing properties. Huo et al studied the photoelectrical gas sensing properties of a FET sensor based on WS 2 nanoflakes obtained by exfoliation.…”

Section: Gas Sensor Using 2d Nanostructuresmentioning

confidence: 99%

Two‐Dimensional Nanostructured Materials for Gas Sensing

Liu

Pinna

et al. 2017

Adv Funct Materials

662

356

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Two-dimensional (2D) nanostructures are highly attractive for fabricating nanodevices due to their high surface-to-volume ratio and good compatibility with device design. In recent years 2D nanostructures of various materials including metal oxides, graphene, metal dichalcogenides, phosphorene, BN and MXenes, have demonstrated significant potential for gas sensors. This review aims to provide the most recent advancements in utilization of various 2D nanomaterials for gas sensing. The common methods for the preparation of 2D nanostructures are briefly summarized first. The focus is then placed on the sensing performances provided by devices integrating 2D nanostructures. Strategies for optimizing the sensing features are also discussed. By combining both the experimental results and the theoretical studies available, structure-properties correlations are discussed. The conclusion gives some perspectives on the open challenges and future prospects for engineering advanced 2D nanostructures for high-performance gas sensors devices.

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“…In addition to MoS 2 , other layered pristine TMDCs were employed for gas sensing and studies have demonstrated WS 2 [94], MoSe 2 [13,41], WSe 2 [95][96][97][98], MoTe 2 [42,43,99,100], and NbS 2 [101] can be used in FET for the detection of O 2 , NO, NO 2 , SO 2 , etc., with a sensing capability of ppm to ppb level. Studies on MoSe 2 FET sensor suggest that gap state variation is the key mechanism in NO 2 sensing based on modeling and quantum transport simulation.…”

Section: Gas Sensingmentioning

confidence: 99%

“…As the representative TMDC, MoS 2 shows a high carrier mobility (60 cm 2 /V s at 250 K), a layer-dependent bandgap (1.2-1.8 eV), a high transistor on/off ratio (~ 10 8 ), and reasonable environmental stability [11]. Recent reports have demonstrated that 2D MoS 2 is a desirable channel material in FET sensor with breakthroughs in sensing performance for various analytes including NO 2 [12][13][14][15], NH 3 [16,17], chemical vapor [18,19], metal ion [20][21][22], small molecule [23][24][25], as well as biomaterials such as nucleic acid [26][27][28][29], protein [30][31][32], and microorganism [33]. Compared with MOSFET sensors, 2D-TMDCbased FET sensors normally show higher sensitivities due to the 2D nanosheet structure of TMDC.…”

Section: Introductionmentioning

confidence: 99%

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

2020

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• Recent advances of two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based field-effect transistor (FET) sensors for environmental analysis are summarized. • Representative TMDC FET sensors in gaseous and aqueous media analysis are introduced. • Challenges and future research directions of 2D TMDC FET sensors are discussed. ABSTRACT Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDCbased FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.

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A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

Cited by 113 publications

References 44 publications

Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition

Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition

Two‐Dimensional Nanostructured Materials for Gas Sensing

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

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