DOI: 10.1109/isscc.1979.1155899
View full text

Abstract: HIGH POWER or low noise performanee of a GaAs FET is a critical function of the impedances presented at the device terminals. At present, the design of circuits for broadband microwave power and low-noise amplifiers relies heavily on the empirical cut-try, computer-aided optimization and insertion loss synthesis techniques. The first two design methods can be very frustrating and result in sub-optimal circuits. The insertion loss synthesis method has very little control over the impedances presented at the de…

expand abstract