1980
DOI: 10.1109/isscc.1980.1156097
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K. Nishiuchi, H. Shibayama, T. Nakamura, T. Hisatsugu, Y. Fukukawa

Abstract: A Gb RATE frequency divider employing MOS technology will be described. The divider is constructed with buried channel MOS(BC-hlOS)FETs and is designed using full I p m patterning rules. The maximum counting frequency of 1.64GHz and a propagation dclay of 72.5ps/gatc havc been obtained.speed logic circuits has become more urgent. With bipolar or GaAs circuits, Gb logic operations have bccn proved' -3 . However, with MOS circuits, such high speed operation has not as yet been obtained4. This paper will present…

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