A Facile Solution‐Doping Method to Improve a Low‐Temperature Zinc Oxide Precursor: Towards Low‐Cost Electronics on Plastic Foil

Abstract

Optimization of thin-fi lm transistors performance is usually accompanied by an increase of the process temperature. This work presents a method to raise the fi eld effect mobility by a factor of 3 without a change of the process parameters. The modifi cation involves a solution doping process where an ammine zinc complex is formed in the presence of metal ions of the 13 th group, namely gallium and indium. Morphological studies, including scanning electron microscopy and atomic force microscopy, reveal the difference among the resulting fi lms. Moreover, X-ray diffraction results show that the doping affects the preferred orientation of the zinc oxide crystals in the resulting fi lm. The electrical properties vary distinctly and are best for a solution doped with both gallium and indium. With a double-layer system the performance of this new precursor exceeds fi eld effect mobility values of 1 cm 2 V −1 s −1 after a maximum process temperature of 160 °C.

Atmospheric Dependence of Thermoelectric Generation in SnO2 Thin Films with Different Intergranular Potential Barriers Utilized for Self-Powered H2S Sensor Fabrication

“…Although the design and fabrication of TE sensors precede, commercially and historically, the power generation aspect of thermoelectricity, recent advancements in TE materials have failed to elevate the sensory aspect. A wide range of metal-oxide-based compounds with varieties of doping and nanostructural modifications have recently been utilized for a verity of electronic − and thermoelectric − applications. On the other hand, polycrystalline oxides and their alloys have been the most widely investigated materials for their chemiresistive properties and gas sensor fabrication.…”

Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

“…Electronic devices on plastic substrate have been studied a lot for bendable, foldable, and/or rollable devices for human‐friendly products . To reduce the thickness and weight of the display, a lot of prototypes have been reported .…”

“…Electronic devices on plastic substrate have been studied a lot for bendable, foldable, and/or rollable devices for human-friendly products. [1][2][3][4][5][6][7][8][9][10][11] To reduce the thickness and weight of the display, a lot of prototypes have been reported. [12][13][14][15][16][17][18][19] To realize the flexible active-matrix organic light-emitting diode (AMOLED) displays, the thin-film transistor (TFT) backplanes on plastic substrates have been studied.…”

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors

“…For this reason, intensive research has been done in the development of solution-processed metal oxide films because of its simplicity, low cost, and high performance. These films are promising candidates to replace amorphous silicon as the active layer used in thin-film transistors (TFTs) as a switching device, e.g., for display applications and optoelectronic devices. − Indium oxide based TFTs provide high mobility, which is necessary for advanced display technologies such as 8K ultrahigh-definition, large-size televisions and organic light-emitting diode (OLED) displays. , …”