AN EXPERIMENTAL FLOATING-GATE FET having two capacitively-coupled control gates for applications requiring nonvolatility and electrical alterability is described. Enhanced conduction insulator is used under one control gate to charge/discharge the floating gate.The first floating gate FET' , suitable for some applications requiring nonvolatility and electrical alterability, evidently used Fowler-Nordheim (F-N) tunneling through a very thin layer of Si022 as a mechanism to change the floating gate charge. Ther…
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