A direct calculation of the resonance tunneling in metal–insulator–metal tunnel junctions

Knauer, H.; Richter, Jessica; Seidel, P.

doi:10.1002/pssa.2210440132

Cited by 43 publications

(11 citation statements)

References 15 publications

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“…E, was written in terms of the weight of the potential and can be considered as a parameter. Our results agree with those previously obtained in [l] and [9], the latter considered metal-insulator-metal tunnel junctions and ignored the effective mass change between the various regions. The resonance condition is given by H , = 0 and the resonance energies should be calculated by solving…”

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confidence: 92%

Resonant‐Tunneling Lifetime in Symmetrical Double‐Barrier and δ‐Doped Barrier Heterostructures

Chen

1994

Physica Status Solidi (b)

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Resonant tunneling through a quantum well has generated considerable experimental and theoretical interest, not only because of its possible application to ultrahigh-speed electronic devices, but its study involves also a great deal of basic physics. In particular, there is now an urgent need for a better estimate of the characteristic time scales involving the key process that governs the ultimate speed of resonant tunneling in quantum-well devices. The dwell time and the transmission time can be extracted from optical or transport experiments. These times can be derived from the study of wave-packet propagation with the timedependent Schrodinger equation, but they can also be related to some static characteristics of the resonant tunneling structure [l to 71. Most commonly the lifetime of the resonance state is determined from the halfwidth of the energy derivatives of the phase shift or, equivalently, from the transmission probability T ( E ) or the study of wave functions in the complex energy plane. Another possibility would be the analysis of the phase shift in reflection.In view of its current importance, in this note we shall consider resonant tunneling through a double-barrier single-quantum-well structure without bias. We do not attempt to clarify the basic concept and definitions of the characteristic time for the quantum-well system, we only focus our attention to an explicit calculation of the resonant-tunneling lifetime of symmetrical systems. Approximate results (based on the dwell time) for the case of strong localization (i.e. high and/or wide barriers) have been given previously by Arsenault and Menuier 111, Araki [2], Payne [3], and Ricco and Azbel [4], respectively. In [2 to 41, a single effective mass for the entire structure was assumed and the effective mass difference between the barrier and well regions was overlooked. Our result reduces (with minor, but interesting modifications) to theirs in appropriate limits. The obtained formulas are rather simple and are useful tools for understanding the physical mechanisms of the resonant-tunneling phenomenon and for developing other new types of ultrahigh-speed devices.The situation is shown in Fig. 1. A well of width w is located between two equal barriers, each of width b and height V,. We consider the case of E < V, only for simplicity, the extension to the case of E > V, is straightforward. By directly solving the effective mass Schrodinger equation in the plane wave approximation for the incident electron, and matching the wave functions and their first derivatives at each discontinuity, we obtain the analytical expression for the transmission probability. The global transmission probability I ) Lanzhou 730000, People's Republic of China.

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confidence: 92%

Resonant‐Tunneling Lifetime in Symmetrical Double‐Barrier and δ‐Doped Barrier Heterostructures

Chen

1994

Physica Status Solidi (b)

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“…The temperature dependence of J h product following from (14) does not differ considerably from the predictions of Ambegaokar -Baratoff (AB) theory [15] (see Fig.1). The normal junction resistance in this limit is defined only by the tunneling processes.…”

Section: Theoretical Modelmentioning

confidence: 58%

“…The normal junction resistance in this limit is defined only by the tunneling processes. The channels for normal and supercurrent transfer coincide with each other, and at T=Tc the results of the Aslamosov-Larkin theory are followed from (14). At small temperatures T<<Tc passing (14) from the summation to the integration over w we get:…”

Section: Theoretical Modelmentioning

confidence: 82%

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Physics of the long range proximity effect

Devyatov

Kupriyanov

1994

J. Phys. IV France

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The theoretical model for explanation of the so-called "long range proximity effect" (temperature independent and extremely large supercurrent decay length g, ' z 10 -50nm) of the HTS Josephson junctions with semiconductor oxide interlayer is proposed. It is suggested that the resonant tunneling via a large number of single localized states (LS) in the interlayer is responsible for this effect. We assume that LS are distributed uniformly in the vicinity of Fenny energy and over the interlayer and that their density is small enough for the interaction of electrons occupying different LS be negligible. The interaction of electrons at one LS is also not taken into account. We assume also that the potential barrier in the interlayer has the rectangular form with the height (V -p) and the thickness d satisfies the inequalities: (V -p) << p , dT, / (V -p ) s a s d , where p is the chemical potential, m is the electron effective mass, a-' = (2m(V -,u))-'/~ is the effective radius of LS. The proposed model provides the explanation for whole scope of the data concerning "long range proximity effect". We believe that the model can be also applicable for interpretation of the properties of HTS single grain boundary junctions and Low-T, structures with the gapless semiconductor interlayer.

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“…This asymmetry could be explained by flux trapped in the junction. Direction dependent tunnelling mechanisms including surface states [21] and traps in the insulator [22] may also be related to an asymmetric current transport. An alternative explanation could be the presence of a time-reversal symmetry broken state in pnictide superconductors as described in [23].…”

Section: Electrical Measurementsmentioning

confidence: 99%

Preparation of hybrid Josephson junctions on Co-doped Ba-122 single crystals

Reifert¹,

Hasan²,

Döring³

et al. 2014

Supercond. Sci. Technol.

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Abstract. In this paper we present a method for processing a hybrid Josephson junction on Co-doped BaFe 2 As 2 (Ba-122) single crystals with a thin film Pb-counter electrode and a barrier layer of TiO x . This includes the leveling and polishing of the crystals and structuring them with thin film techniques such as photo lithography, sputtering and ion beam etching (IBE). The junctions show hysteretical resistively and capacitively shunted junction (RCSJ)-like I-V characteristics with an I c R n -product of about 800 µV. ‡ Present address: Physikalisch-Technische Bundesanstalt (PTB),

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A direct calculation of the resonance tunneling in metal–insulator–metal tunnel junctions

Cited by 43 publications

References 15 publications

Resonant‐Tunneling Lifetime in Symmetrical Double‐Barrier and δ‐Doped Barrier Heterostructures

Resonant‐Tunneling Lifetime in Symmetrical Double‐Barrier and δ‐Doped Barrier Heterostructures

Physics of the long range proximity effect

Preparation of hybrid Josephson junctions on Co-doped Ba-122 single crystals

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