Abstract:The DEPFET detector offers radiation detection and amplification jointly by embedding a field effect transistor into fully depleted silicon. Due to the excellent noise performance (ENC ¼ 2:2 e À for single pixel at room temperature and 6 ms shaping time) and the high spatial resolution of the device (4:3 mm at 22 keV using 50 Â 50 mm 2 pixels), the DEPFET concept is attractive for X-ray astronomy, for biomedical application and for tracking in particle physics. For the vertex detector of a future TeV-scale lin… Show more
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