A comparative study of different contact resistance test structures dedicated to the power process technology

Oussalah, Slimane; Djezzar, Boualem; Jérisian, R.

doi:10.1016/j.sse.2005.08.004

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…We find the following width for the amorphous interface The mask set of our process includes transfer length method (TLM) structures which we use for assessing the quality of the fabricated ohmic contacts [17]. The contact resistivities measured with the TLM structures are in the order of ρ Contact ≈ 0.05 Ω cm 2 .…”

Section: Jinst 17 C10015mentioning

confidence: 99%

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Wüthrich

Rubbia

2022

J. Inst.

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Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an alternative to bump-bonding for joining sensors to readout chips. Previous investigations have shown that the amorphous layer formed at the interface during bonding is detrimental to charge propagation. To investigate the influence of the bonding interface on signal collection we have fabricated custom test structures by bonding high-resistivity N to high-resistivity P-type silicon wafers thus forming P-N junctions. Scanning transmission electron microscopy shows indeed the formation of ca. 3 nm wide amorphous layer at the interface. Using a scanning transient current technique (TCT) setup we were able to record generated signals. Illuminating our sample with light of different wavelengths and from different sides, indicates that the P side of the bonded structures can be fully depleted, but not the N side. This indicates a strongly asymmetric depletion behaviour which we attribute to the presence of the bonding interface.

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Section: Jinst 17 C10015mentioning

confidence: 99%

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Wüthrich

Rubbia

2022

J. Inst.

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“…From the slope of the curve, R S can be calculated. The specific contact resistance (r c ) can be calculated from 85,119…”

Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

Metal–semiconductor contact in organic thin film transistors

2008

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“…Identical electrode geometries in both new and aged samples automatically eliminated issues related to current distributions. 21 Besides, measurements were performed at parts of samples where switching has not been conducted; this prevents any alteration to the devices arising from switching-related mechanisms. With a small direct bias current ͑10 A͒, the measured R e at Al electrodes in the fresh device and the 6 month old devices were 6 and 17 k⍀, respectively.…”

Section: Resultsmentioning

confidence: 99%

Interfacial defects in resistive switching devices probed by thermal analysis

Lau

Leung

et al. 2009

Journal of Applied Physics

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Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr 0.7 Ca 0.3 MnO 3 ͑PCMO͒ / Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlO x presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism ͓Li et al., J. Phys. D 42, 045411 ͑2009͔͒. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices.

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A comparative study of different contact resistance test structures dedicated to the power process technology

Cited by 11 publications

References 12 publications

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Metal–semiconductor contact in organic thin film transistors

Interfacial defects in resistive switching devices probed by thermal analysis

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